Results 141 to 150 of about 13,015 (262)

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

open access: yesAdvanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter   +7 more
wiley   +1 more source

Bio-Inspired Spike-Timing-Dependent Plasticity Learning with Metal Halide Perovskites: Toward Artificial Synaptic Functionality. [PDF]

open access: yesACS Appl Mater Interfaces
Shooshtari M   +5 more
europepmc   +1 more source

Enhanced High Dimensionality and the Information Processing Capacity in Interfered Spin Wave‐Based Reservoir Computing, Achieved With Eight Detectors

open access: yesAdvanced Electronic Materials, EarlyView.
Physical reservoir computing (PRC) based on spin wave interference has demonstrated high computational performance, yet room for improvement remains. In this study, we fabricated this concept PRC with eight detectors and evaluated the impact of the number of detectors using a chaotic time series prediction task.
Sota Hikasa   +6 more
wiley   +1 more source

Demonstration of CMOS-compatible memristor-based electrochemical biosensor transducer with threshold-sensing functionality. [PDF]

open access: yesNat Commun
Kim YJ   +23 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

A Lithium Fluoride Interfacial Layer for Low-Voltage and Reliable Perovskite Memristors. [PDF]

open access: yesACS Appl Electron Mater
Pendyala NK   +5 more
europepmc   +1 more source

Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2

open access: yesAdvanced Electronic Materials, EarlyView.
Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx‐only devices, these heterostructures demonstrate higher switching voltages, faster switching speeds, and reduced variability.
Jimin Lee   +9 more
wiley   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li   +4 more
wiley   +1 more source

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