Results 151 to 160 of about 7,847 (301)

Enhanced High Dimensionality and the Information Processing Capacity in Interfered Spin Wave‐Based Reservoir Computing, Achieved With Eight Detectors

open access: yesAdvanced Electronic Materials, EarlyView.
Physical reservoir computing (PRC) based on spin wave interference has demonstrated high computational performance, yet room for improvement remains. In this study, we fabricated this concept PRC with eight detectors and evaluated the impact of the number of detectors using a chaotic time series prediction task.
Sota Hikasa   +6 more
wiley   +1 more source

Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applications

open access: yesAdvanced Electronic Materials
Industry 4.0 is accelerating the growth of connected devices, resulting in an exponential increase in generated data. The current semiconductor technology is facing challenges in miniaturization and power consumption, demanding for more efficient ...
Miguel Franco   +4 more
doaj   +1 more source

Carbon-based memristors for resistive random access memory and neuromorphic applications

open access: yesChip
As a typical representative of nanomaterials, carbon nanomaterials have attracted widespread attention in the construction of electronic devices owing to their unique physical and chemical properties, multi-dimensionality, multi-hybridization methods ...
Fan Yang   +5 more
doaj   +1 more source

Non‐Destructive, Reference‐Free Quantitative Analysis of TaOx Memristive Devices Using Soft X‐Ray Radiation

open access: yesAdvanced Electronic Materials, EarlyView.
A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch   +9 more
wiley   +1 more source

Design and Fabrication of Memristors

open access: yes, 2010
This paper details the design and fabrication of memristors in the RIT Semiconductor and Microsystem Fabrication Laboratory. Two methods of partially oxidizing titanium were explored, reactive sputtering and thermal oxidation.
Nagourney, Tal R
core  

GaN nanomembranes as memristors with self-rectification [PDF]

open access: yes, 2017
We have recently shown that GaN ultrathin membranes suspended on GaN nanowires having a thickness of 15 nm and planar dimensions of 12×184 microns are acting as memristive devices.
CIOBANU, Vladimir   +5 more
core  

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li   +4 more
wiley   +1 more source

Tin dioxide memristors on glass and plastic substrates

open access: yes, 2011
NanoMIL has studied and developed SnO2-based memristors, while the W.M Keck Center has been a research leader in printed silver inks. The focus of this thesis is to take the previous generation of memristors on glass and develop a process for creating ...
Del Real, Oscar
core  

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol   +7 more
wiley   +1 more source

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