Results 161 to 170 of about 9,687 (293)

Ultralow‐Energy Analog Reservoir Computing via Reconfigurable 2‐Transistor Memory

Advanced Science, EarlyView.
This work presents a reconfigurable reservoir‐computing platform based on an oxide InSnZnO two‐transistor cell in which a hold bias selects volatile relaxation for the reservoir or quasi‐non‐volatile multilevel storage for the readout. Multi‐level hold‐bias kernel tune relaxation currents to generate diverse time constants, enriching reservoir states ...
Jeong‐Min Park, Yeong‐In Kim, Jeong Hyun Yoon, Sein Lee, Wooho Ham, Dongyun Lee, Junseo Lee, Dongwook Shin, Kyung Jun Park, Seok Daniel Namgung, Min‐Kyu Song, Jang‐Yeon Kwon   +11 more
wiley   +1 more source

Liquid‐Metal Interfacial Chemistry for Crystal and Defect Engineering in Two‐Dimensional Post‐Transition‐Metal Materials

Advanced Science, EarlyView.
Liquid‐metal interfaces provide dynamic reaction environments in which crystal growth, composition, and defect formation are intrinsically coupled. This Review reveals how interfacial oxidation, alloy thermodynamics, elemental migration, atmosphere, and processing govern defects in 2D post‐transition‐metal materials, and how these defects can be ...
Zhejun Hong, Mohammad B. Ghasemian, Chung Kim Nguyen, Huy Hoang Nguyen, Kourosh Kalantar‐Zadeh, Torben Daeneke, Nitu Syed, Ali Zavabeti   +7 more
wiley   +1 more source

Dual Randomness From Spatial and Temporal Variations in Stochastic Zinc Gallate Nanoclusters for PUF and TRNG Co‐Driven Image Generation

Advanced Science, EarlyView.
A dual‐randomness hardware platform is demonstrated by integrating PUF and TRNG functionalities into mixed‐ZGO nanoclusters. By leveraging spatial and temporal stochasticity, the mixed‐ZGO NCs device enables both unique identification and random signal generation.
Seungme Kang, Wangmyung Choi, Jueun Lee, Yeong Kwon Kim, Byung Chul Jang, Wonjun Shin, Hocheon Yoo   +6 more
wiley   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

Advanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto, Yuriy V. Pershin   +3 more
wiley   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Novel Optical Functionalities in Memristors

Advanced Electronic Materials, EarlyView.
We present a tunnel junction memristor with expanded optical functionalities enabled by the integration of an ultra‐thin CdS barrier and a top ITO electrode. UV illumination triggers a photovoltaic response that can sense the memristor state. At very low temperatures, the UV light generates a high injection of photocarriers and produces a volatile ...
Isabel Tenreiro, Víctor Rouco, Mariona Cabero, Henry Navarro, Javier del Valle, Iván K. Schuller, Alberto Rivera‐Calzada   +6 more
wiley   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff   +7 more
wiley   +1 more source

Enhanced High Dimensionality and the Information Processing Capacity in Interfered Spin Wave‐Based Reservoir Computing, Achieved With Eight Detectors

Advanced Electronic Materials, EarlyView.
Physical reservoir computing (PRC) based on spin wave interference has demonstrated high computational performance, yet room for improvement remains. In this study, we fabricated this concept PRC with eight detectors and evaluated the impact of the number of detectors using a chaotic time series prediction task.
Sota Hikasa, Wataru Namiki, Daiki Nishioka, Maki Nishimura, Ryo Iguchi, Kazuya Terabe, Takashi Tsuchiya   +6 more
wiley   +1 more source

Non‐Destructive, Reference‐Free Quantitative Analysis of TaOx Memristive Devices Using Soft X‐Ray Radiation

Advanced Electronic Materials, EarlyView.
A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch, Xin Zheng, Andreas Haidl, Jan Weser, Christian Stadelhoff, Marc Dummin, Leona J. Bauer, Rainer Unterumsberger, Ilia Valov, Burkhard Beckhoff   +9 more
wiley   +1 more source