Results 181 to 190 of about 9,687 (293)

Kesterite-based optoelectronic synaptic memristors: a mini-review on material design and neuromorphic application. [PDF]

Sci Technol Adv Mater
Yang F, Sun H, Dong X, Zhang X, Chen J, Zhang X, Zhao Y, Li Y.   +7 more
europepmc   +1 more source

Experimental Demonstration of Temporally Aware Fault‐Tolerant Sensor Fusion Using Memristive Associative Learning

Advanced Electronic Materials, EarlyView.
In dynamic driving scenarios, the proposed approach ensures only temporally aligned sensor inputs to make driving decisions, preventing false activations. By enabling selective hardware‐level learning, it achieves fast, reliable responses under noisy conditions.
Kapil Bhardwaj, Ashfak Nehal, Dmitrii Semenov, Roman Sotner, Sayani Majumdar   +4 more
wiley   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Polymer-Based Linear and Symmetric Artificial Synaptic Memristors for Accurate and Reliable Neuromorphic Computing Applications. [PDF]

Nanomaterials (Basel)
Kumar A, Tseng TY.
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Damage-free van der Waals metal/NbO_x-NbSe₂ integration for reliable and flexible memristor in neuromorphic computing. [PDF]

Nano Converg
Phan TL, Nguyen MC, Dang DX, Vu VT, Vu TTH, Yun HW, Li H, Lee J, Lemme MC, Aggarwal P, Yu WJ.   +10 more
europepmc   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

Advanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe   +6 more
wiley   +1 more source

A fully-CMOS spiking LIF neuron implementation for optimized STDP learning on memristor. [PDF]

Sci Rep
Karamimanesh M, Moosavi SMR, Abiri E, Shahsavari M, Hassanli K, Kumar P, Kang SM.   +6 more
europepmc   +1 more source

Ion‐Gating Reservoir Computing for Preprocessing‐Free Speech Recognition from Throat Vibrations

Advanced Electronic Materials, EarlyView.
This work presents a throat‐mounted mechanoelectric sensor integrated with an ion‐gel/graphene reservoir device for on‐device speech recognition. The system converts raw biomechanical vibrations into rich nonlinear current dynamics, enabling efficient classification through a simple linear readout. The approach highlights a compact and tunable physical‐
Daiki Nishioka, Akito Tateyama, Hina Kitano, Takashi Nakanishi, Kazuya Terabe, Takashi Tsuchiya   +5 more
wiley   +1 more source

Diffusive memristors in the edge of chaos. [PDF]

Nat Commun
Kim SJ, Wang T, Zhao R, Rossetti D, Xu Y, Zhao J, Ascoli A, Corinto F, Williams RS, Yang JJ.   +9 more
europepmc   +1 more source