Results 191 to 200 of about 9,687 (293)

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Hyperdimensional in-memory computing with analogue memristive crossbar arrays. [PDF]

Nat Commun
Huang Y, Rad AJ, Belkin D, Ge N, Joshua Yang J, Hu M, Xia Q.   +6 more
europepmc   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Memristive Physical Reservoir Computing. [PDF]

Adv Sci (Weinh)
Jiao D, Wang Z, Wang J, Zhang L, Wei X, Hu L, Li Z, Vasilakos AV, Ye Z, Zhuge F.   +9 more
europepmc   +1 more source

Nonlinear Dynamics and Invariants of Motion in ReRAM Cells

Advanced Electronic Materials, EarlyView.
A second‐order cell, hosting one capacitor and two back‐to‐back ReRAMs, admits Invariants of Motion: its states lie on one‐dimensional manifolds at all times. The cell shows quiescent monostability or bistability, depending on the manifold index. At equilibrium, the capacitor voltage vanishes.
Mauro Di Marco, Mauro Forti, Luca Pancioni, Giacomo Innocenti, Alberto Tesi, Alon Ascoli   +5 more
wiley   +1 more source

Rolling Up Transition Metal Chalcogenides/Oxide Heterostructures Enables Polarity-Tunable and High-Switchable Memristors. [PDF]

Adv Mater
Wang X, Chen X, Qiao R, Xu J, Liu J, Yu K, Zhao Y, Liu X, Zhang E, Rong R, Gao L, Guo Y, Liu Y, Guo W.   +13 more
europepmc   +1 more source

Oxygen‐Scavenging‐Driven Interlayer Engineering for Balancing Linearity and Retention in IGZO Synaptic Memristors

Advanced Electronic Materials, EarlyView.
Oxygen‐scavenging‐induced self‐formed interlayers regulate Schottky‐barrier modulation in IGZO memristors, producing a fundamental trade‐off between synaptic update linearity and retention. A preserved AlOx interlayer moderates voltage distribution and enables gradual, nearly linear conductance updates, whereas a soft‐broken SiO2 interlayer provides a ...
Jae Woo Lee, Dong Hyeop Shin, Seung Joo Myoung, Soohong Eo, Wonjung Kim, Seeun Lee, Changwook Kim, Junjong Lee, Yoon Jung Lee, Sung‐Jin Choi, Sungjun Kim, Dae Hwan Kim   +11 more
wiley   +1 more source

2D Materials Powering Neuromorphic Intelligence. [PDF]

Nanomicro Lett
Kazmi J, Ahmad W, Naqi M, Abbas Y, Abbas A, Wang P, Mohamed MA, Rosei F, Wang ZM, Song H.   +9 more
europepmc   +1 more source

Predictable and Scalable Analog Matrix–Vector Multiplication in Memristor Crossbars via Closed‐Form Wire‐Resistance Compensation

Advanced Electronic Materials, EarlyView.
Wire resistance and sneak paths severely compromise the performance of large memristor crossbars. A predictive closed‐form distributed line‐resistance model, combined with a fourmatrix geometry‐averaging algorithm, eliminates these parasitic limitations.
Davide Rossetti, Yichun Xu, Ludovica Asselta, J. Joshua Yang, R. Stanley Williams, Fernando Corinto   +5 more
wiley   +1 more source