Results 191 to 200 of about 13,297 (272)

Electroforming in VO<sub>2</sub> Switch: Phase Transformation and Electromigration Phenomena. [PDF]

open access: yesACS Nano
Conti V   +5 more
europepmc   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

open access: yesAdvanced Functional Materials, Volume 36, Issue 36, 4 May 2026.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon   +6 more
wiley   +1 more source

Error-aware probabilistic training for memristive neural networks. [PDF]

open access: yesNat Commun
Liu J   +8 more
europepmc   +1 more source

Orientation Engineering of MXene Flakes

open access: yesAdvanced Materials, Volume 38, Issue 25, 4 May 2026.
Orientation engineering of MXene flakes refers to the transformation of disordered MXene flakes into ordered architectures with optimized multiphysical transport properties. Focusing on this topic, this review outlines key principles, characterization, fabrication strategies, and advanced applications of oriented MXene structures.
Yizhou Wang   +7 more
wiley   +1 more source

Synthesis of Large-Area 2D Prussian Blue as Ion-Transport Channels for Non-Volatile Memristors. [PDF]

open access: yesSmall
Torres-Cavanillas R   +9 more
europepmc   +1 more source

Versatile Magneto‐Dielectric Response of Epitaxial Thin Films of the High Entropy Oxide Perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3

open access: yesAdvanced Materials, Volume 38, Issue 26, 8 May 2026.
The magnetic high entropy oxide perovskite Nd(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 exhibits a substantially large dielectric constant (εr) at room temperature, which shows distinct anionic and cationic contributions in the form of zero and finite bias peaks, respectively, down to its magnetic transition temperature (Tmag).
Roxana Capu   +19 more
wiley   +1 more source

A ferroelectric-memristor memory for both training and inference. [PDF]

open access: yesNat Electron
Martemucci M   +11 more
europepmc   +1 more source

Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory

open access: yesAdvanced Science, Volume 13, Issue 25, 4 May 2026.
Schematic and key features of the proposed forward‐forward physical unclonable neural network (FF‐PUNN), incorporating a concealable physical unclonable function (PUF) layer and forward‐forward (FF) learning. ABSTRACT The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and ...
Sung‐Ho Park   +8 more
wiley   +1 more source

Polyoxometalates for Health, Electronics, Energy, and the Environment: Challenges, Opportunities, and Future Horizons

open access: yesChemistryEurope, Volume 4, Issue 5, May 2026.
Polyoxometalates (POMs), illustrated as lemon‐like cars racing along a winding road, symbolize the accelerating progress of POM research toward technological applications. Global research communities, recent advances, and emerging opportunities highlight how coordinated efforts drive the transition of POM science from molecular discovery to deployable ...
Kirill Monakhov   +15 more
wiley   +1 more source

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