Results 231 to 240 of about 25,251 (300)
High-Entropy Oxide Memristors for Neuromorphic Computing: From Material Engineering to Functional Integration. [PDF]
Nanomicro LettYang JL +6 more
europepmc +1 more source
Arbiter PUF: Uniqueness and Reliability Analysis Using Hybrid CMOS-Stanford Memristor Model [PDF]
Tanvir Rahman, A. B. M. Harun-ur Rashid
openalex
Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li +7 more
wiley +1 more source
Fabrication of Flexible Au/ZnO/ITO/PET Memristor Using Dilute Electrodeposition Method
, 2015 Fatin Bazilah Fauzi +5 more
openalex +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source
Insights behind multi-level conductance transitions in HfO𝑥 memristors
Manasa Kaniselvan +4 more
openalex +2 more sources
Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu +12 more
wiley +1 more source
Vertical Self‐Rectifying Memristive Arrays for Page‐Wise Parallel Logic and Arithmetic Processing
Advanced Materials, Volume 38, Issue 8, 6 February 2026.This study proposes a page‐wise logic‐in‐memory architecture realized in a 3D vertical resistvie random‐access memory array of self‐rectifying memristors. By introducing intra‐ and inter‐page logic primitives, the system enables Boolean and arithmetic operations to be executed directly within the memory.
Kunhee Son +12 more
wiley +1 more source
Combinatorial Screening for Europium Induced Defect Engineering in Titania Anodic Memristors
Advanced Materials Interfaces, Volume 13, Issue 3, 3 February 2026.A Ti‐Eu thin‐film combinatorial libary (3‐17 at.% Eu) was fabricated by co‐sputtering and anodisation. Systematic screening revealed forming‐free memristors with analog switching, with compositions between 7‐17 at.% Eu showing improved endurance and multilevel resistive states.
Elena Atanasova +5 more
wiley +1 more source
Memristor-Based Artificial Neural Networks for Hardware Neuromorphic Computing. [PDF]
Research (Wash D C)Jin B, Wang Z, Wang T, Meng J.
europepmc +1 more source