Results 201 to 210 of about 10,737 (241)

Bulk Micromachining of Si by Metal‐assisted Chemical Etching

Small, 2014
Bulk micromachining of Si is demonstrated by the well‐known metal‐assisted chemical etching (MaCE). Si microstructures, having lateral dimension from 5 μm up to millimeters, are successfully sculpted deeply into Si substrate, as deep as >100 μm.
Dahl-Young Khang
exaly   +3 more sources

Metal Assisted Chemical Etch of Polycrystalline Silicon

Journal of Micro- and Nano-Manufacturing, 2022
Abstract Metal-assisted chemical etching (MacEtch) of silicon shows reliable vertical anisotropic wet etching only in single-crystal silicon, which limits its applications to a small number of devices. This work extends the capabilities of MacEtch to polysilicon which has potential to enable high-volume and cost-sensitive applications ...
Crystal Barrera, Paras Ajay, Akhila Mallavarapu, Mark Hrdy, S. V. Sreenivasan   +4 more
openaire   +1 more source

Metal-assisted chemical etching of silicon and nanotechnology applications

Nano Today, 2014
AbstractSilicon nanostructures exhibit promising application potentials in many fields in comparison with their bulk counterpart or other semiconductor nanostructures. Therefore, the exploiting of controllable fabrication methods of silicon nanostructures, and the exploring of further applications of silicon nanostructures gain extensive attentions. In
Hee Han, Zhipeng Huang, Woo Lee
exaly   +2 more sources

Metal‐Assisted Chemical Etching of Silicon: A Review

Advanced Materials, 2011
This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced.
Zhipeng Huang, Nadine Geyer, Johannes de Boor   +2 more
exaly   +2 more sources

Vapor Phase Metal‐Assisted Chemical Etching of Silicon

Advanced Functional Materials, 2014
This work introduces and explores vapor phase metal‐assisted chemical etching (VP‐MaCE) of silicon as a method to bypass some of the challenges found in traditional liquid phase metal‐assisted chemical etching (LP‐MaCE). Average etch rates for Ag, Au, and Pd/Au catalysts are established at 31, 70, and 96 nm/min respectively, and the relationship ...
Owen Hildreth, Daniel R Schmidt
exaly   +2 more sources

Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon

Nanoscale, 2012
Metal assisted chemical etching with interconnected catalyst structures has been used to create a wide array of organized nanostructures. However, when patterned catalysts are not interconnected, but are isolated instead, vertical etching to form controlled features is difficult.
Lianto, P., Yu, S., Wu, J., Thompson, C.V., Choi, W.K.   +4 more
openaire   +2 more sources

Progress in metal-assisted chemical etching of silicon nanostructures

Procedia CIRP, 2020
Abstract Metal-assisted chemical etching (MACE) is a simple, low-cost method for fabricating silicon nanostructures. In this paper, the recent progress of MACE to control silicon nanostructures is reviewed. The principle of MACE is briefly summarized.
Chengyong Wang, Zhishan Yuan
exaly   +2 more sources

Metal‐Assisted Chemical Etching of Silicon: A Review

Advanced Materials, 2010
AbstractThis article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal‐assisted chemical etching. First, the basic process and mechanism of metal‐assisted chemical etching is introduced.
Zhipeng Huang, Nadine Geyer, Peter Werner, Johannes de Boor, Ulrich Gösele   +4 more
openaire   +1 more source

Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon

ACS Applied Materials & Interfaces, 2016
Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide.
Ruby A Lai, Vijay K Narasimhan, Yi Cui
exaly   +4 more sources

Metal-assisted chemical etching of molybdenum disulphide

2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 2015
Large-scale two-dimensional (2D) electronics requires lithographic patterning of molybdenum disulphide (MoS2) into various nanostructures for device integration. However, fabrication of MoS2 nanostructures with well-defined edges remains challenging.
Wei Sun Leong, John T.L. Thong
openaire   +1 more source