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Etching Volume Effect on the Morphology of Silicon Etched by Metal-Assisted Chemical Method
Applied Mechanics and Materials, 2012Assisted by Ag nanoparticles, Si substrates were etched in aqueous solutions containing hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with different volumes of etching solution. The etching morphology of Si wafers was found to be affected by the volumes.
Wei Wang +3 more
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Effect of catalyst shape on etching orientation in metal-assisted chemical etching of silicon
CrystEngComm, 2014Silicon nanowires with vertical, slanting and zigzag architectures have been fabricated by metal-assisted chemical etching of silicon wafers (n-Si(100), n-Si(111) and n-Si(110)).
Weiwei Xia +3 more
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Formation of GaP nanocones and micro-mesas by metal-assisted chemical etching
Physical Chemistry Chemical Physics, 2016Metal-assisted chemical etching (MaCE) of a (100) n-type GaP using patterned Pd catalysts in a mixed solution of HF and H 2 O 2 at room temperature is reported for the first time.
Jaehoon, Kim, Jihun, Oh
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(Invited) Light Enhanced Metal Assisted Chemical Etching of Silicon
ECS Meeting Abstracts, 2018The study of electrochemicl porosification of silicon has allowed the production of different kinds of porosities in it, ranging from micropores to macropores, and directed by cristallographic planes, or electrical current lines. Additional studies have been on the use of different kinds of electrolytes, to etch faster, or with lower branching. Pore
Enrique Quiroga-González +2 more
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Carrier Dynamics in Si Nanowires Fabricated by Metal-Assisted Chemical Etching
ACS Nano, 2012Silicon nanowire arrays fabricated by metal-assisted wet chemical etching have emerged as a promising architecture for solar energy harvesting applications. Here we investigate the dynamics and transport properties of photoexcited carriers in nanowires derived from an intrinsic silicon wafer using the terahertz (THz) time-domain spectroscopy.
Hao, Tang +5 more
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Reducing manufacturing constraints of metal-assisted chemical etching
Integrated circuits, advanced sensors, and photovoltaics are just a subset of the technologies enabled by high throughput silicon nanomanufacturing. The manufacturing of these devices is not trivial. The dozens, if not hundreds, of processes that produce silicon-based devices impose limitations on subsequent steps. Inconsistencies and defects resultingopenaire +1 more source
Metal-assisted chemical etching of Ge surface and its effect on photovoltaic devices
Applied Surface Science, 2016Sangwoo Lim, Seunghyo Lee, Eunseok Oh
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