Results 241 to 250 of about 51,422 (275)

Metal‐Assisted Chemical Etching of Silicon: A Review

Advanced Materials, 2010
AbstractThis article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal‐assisted chemical etching. First, the basic process and mechanism of metal‐assisted chemical etching is introduced.
Zhipeng Huang, Nadine Geyer, Peter Werner, Johannes de Boor, Ulrich Gösele   +4 more
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ChemInform Abstract: Metal‐Assisted Chemical Etching of Silicon

ChemInform, 2011
AbstractReview: 121 refs.
Zhipeng Huang, Nadine Geyer, Peter Werner, Johannes de Boor, Ulrich Goesele   +4 more
openaire   +1 more source

(Invited) Light Enhanced Metal Assisted Chemical Etching of Silicon

ECS Meeting Abstracts, 2018
The study of electrochemicl porosification of silicon has allowed the production of different kinds of porosities in it, ranging from micropores to macropores, and directed by cristallographic planes, or electrical current lines. Additional studies have been on the use of different kinds of electrolytes, to etch faster, or with lower branching. Pore
Enrique Quiroga-González, Miguel Ángel Juárez-Estrada, Estela Gómez-Barojas   +2 more
openaire   +1 more source

Mechanism of nanowire formation in metal assisted chemical etching

Electrochimica Acta, 2013
Abstract A simple, effective, and universal model is presented for the formation of silicon nanowires during silver metal assisted chemical etching of silicon. The model explains nanowire formation in terms of well-known and well-understood principles of electrochemical exchange current densities at silver metal/solution interfaces, silicon/silver ...
Zachary R. Smith, Rosemary L. Smith, Scott D. Collins   +2 more
openaire   +1 more source

On the Metal-Assisted Chemical Etching of Nanoporous Silicon

ECS Meeting Abstracts, 2012
Abstract not Available.
Dmitrii Goryachev, Ludvig Belyakov, Olga Yeltsina, Julia Vainshtein, Olga M. Sreseli   +4 more
openaire   +1 more source

High aspect silicon structures using metal assisted chemical etching

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 2016
This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology.
N.V. Toan, M. Toda, T. Ono
openaire   +1 more source

Metal-assisted chemical etching of silicon in HF–H2O2

Electrochimica Acta, 2008
Metal-assisted etching of silicon in HF/H2O2/H2O solutions with Ag nanoparticles as catalyst agents was investigated. SEM observations and etch rate measurements were carried out as a function of the etching solution composition. Depending on the relative amount of HF and H2O2, different regimes of dissolution take place and a strong similarity with ...
C. Chartier, S. Bastide, C. Lévy-Clément   +2 more
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Resolution limits of metal assisted chemical etching of polysilicon

2021
Patterning and etching high aspect ratio, sub-50 nanometer structures for 3D device architectures is becoming a critical challenge in advanced semiconductor device fabrication. Metal assisted chemical etching (MACE) is a wet etch process that has demonstrated very high aspect ratio structures in single crystal silicon at sub-50 nanometer scale.
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Metal-Assisted Chemical Etching of Silicon for Photovoltaic Application

2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO), 2019
Silicon nanowires were obtained by means of metal-assisted chemical etching of silicon wafer. In this work, the effect of Ag-NP deposition time and etching time of silicon on the surface morphology, reflection spectra and photovoltaic characteristics of solar cells was studied.
Viktoriia Koval, Yuriy Yakymenko, Anatoliy Ivashchuk, Mykhailo Dusheyko, Oleksandr Masalskyi, Mykola Koliada, Dmytro Kulish   +6 more
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Metal-assisted chemical etching for designable monocrystalline silicon nanostructure

Materials Research Bulletin, 2016
Abstract Metal-assisted chemical etching (MACE) is a simple, low-cost and versatile method of fabricating various silicon nanostructures. Due to the etching anisotropy of monocrystalline silicon, i.e. its different crystal orientation has different number of silicon back bonds needed to be broken in the etching process, the obtained silicon ...
Meicheng Li, Yingfeng Li, Wenjian Liu, Luo Yue, Ruike Li, Younan Luo, Mwenya Trevor, Bing Jiang, Fan Bai, Pengfei Fu, Yan Zhao, Chao Shen, Joseph Michel Mbengue   +12 more
openaire   +1 more source