A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
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Advances in Fabrication Technology of Fine Metal Masks for OLED Material Deposition: Research Status and Future Development Directions. [PDF]
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3D Etching technology for single crystal silicon using Metal-Assisted Chemical Etching.
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A Modular Standard Operating Procedure for Standardizing Lithium Metal Interfaces. [PDF]
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Nanostructured surfaces for enveloped virus inactivation: mechanisms and fabrication strategies. [PDF]
Wang J, Zhou N, Qu J, Sun R.
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Introducing Chemical Vapor Etching (CVE): A Material-Selective Approach for Surgically Precise Tarnish Removal. [PDF]
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Sidewall Patterning in 3D Micro/Nanosystems: A Review. [PDF]
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Through graphene etching of porous Si by electroless metal assisted chemical etching
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Structuring of Si into Multiple Scales by Metal-Assisted Chemical Etching
Advanced Materials, 2021AbstractStructuring Si, ranging from nanoscale to macroscale feature dimensions, is essential for many applications. Metal‐assisted chemical etching (MaCE) has been developed as a simple, low‐cost, and scalable method to produce structures across widely different dimensions.
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