Results 211 to 220 of about 10,737 (241)

On the Metal-Assisted Chemical Etching of Nanoporous Silicon

ECS Meeting Abstracts, 2012
Abstract not Available.
Dmitrii Goryachev, Ludvig Belyakov, Olga Yeltsina, Julia Vainshtein, Olga M. Sreseli   +4 more
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Direct Visualization of Etching Trajectories in Metal-Assisted Chemical Etching of Si by the Chemical Oxidation of Porous Sidewalls

Langmuir, 2015
We demonstrate a simple method for the visualization of trajectories traced by noble metal nanoparticles during metal-assisted chemical etching (MaCE) of Si. The nanoporous Si layer formed around drilled pores is converted into SiO2 by simple chemical oxidation. Etch removal of the remaining Si using alkali hydroxide leaves SiO2 nanostructures that are
Sung-Soo, Yoon, Dahl-Young, Khang
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Silicon Vias Fabricatied by Metal-Assisted Chemical Etching

2020 21st International Conference on Electronic Packaging Technology (ICEPT), 2020
As a bulk micromachining technology, the metal assisted chemical etching (MACE) is attractive for the application of silicon via fabrication, which is an important technology to realize the 3D stacked chip electrical interconnection in integrated circuit. In this paper, silver is used as catalyst to make an anisotropic wet etching of silicon bulk.
Hongbo Xu, Jianqiang Wang, Hongyun Zhao, Mingyu Li   +3 more
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Mechanism of nanowire formation in metal assisted chemical etching

Electrochimica Acta, 2013
Abstract A simple, effective, and universal model is presented for the formation of silicon nanowires during silver metal assisted chemical etching of silicon. The model explains nanowire formation in terms of well-known and well-understood principles of electrochemical exchange current densities at silver metal/solution interfaces, silicon/silver ...
Zachary R. Smith, Rosemary L. Smith, Scott D. Collins   +2 more
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Resolution limits of metal assisted chemical etching of polysilicon

2021
Patterning and etching high aspect ratio, sub-50 nanometer structures for 3D device architectures is becoming a critical challenge in advanced semiconductor device fabrication. Metal assisted chemical etching (MACE) is a wet etch process that has demonstrated very high aspect ratio structures in single crystal silicon at sub-50 nanometer scale.
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Mechanistic Characteristics of Metal-Assisted Chemical Etching in GaAs

The Journal of Physical Chemistry C, 2014
Because of the unique physical properties, various GaAs micro- and nanostructures have attracted increasing research attention for many technical applications such as solar cells, light-emitting diodes, and field-effect transistors. In this regard, numerous fabrication techniques have been explored, and among all, metal-assisted chemical etching is ...
Ho-Yuen Cheung, Hao Lin, Fei Xiu, Fengyun Wang, SenPo Yip, Johnny C. Ho, Chun-Yuen Wong   +6 more
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ChemInform Abstract: Metal‐Assisted Chemical Etching of Silicon

ChemInform, 2011
AbstractReview: 121 refs.
Zhipeng Huang, Nadine Geyer, Peter Werner, Johannes de Boor, Ulrich Goesele   +4 more
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Metal-Assisted Chemical Etching of Silicon for Photovoltaic Application

2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO), 2019
Silicon nanowires were obtained by means of metal-assisted chemical etching of silicon wafer. In this work, the effect of Ag-NP deposition time and etching time of silicon on the surface morphology, reflection spectra and photovoltaic characteristics of solar cells was studied.
Viktoriia Koval, Yuriy Yakymenko, Anatoliy Ivashchuk, Mykhailo Dusheyko, Oleksandr Masalskyi, Mykola Koliada, Dmytro Kulish   +6 more
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GaAs Microarrays by Noble-Metal Assisted Chemical Etching

ECS Transactions, 2008
Microarrays of n-GaAs were fabricated for both (100) and (111) by colloidal crystal templating, ion sputtering and chemical etching using nanosized Au particles as the etching catalyst. Since self-organized polystyrene spheres were used as a mask, Au particles were selectively deposited at sites resulting in the formation of Au honeycomb pattern on ...
Yukiko Yasukawa, Hidetaka Asoh, Sachiko Ono   +2 more
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Metal-assisted chemical etching of silicon in HF–H2O2

Electrochimica Acta, 2008
Metal-assisted etching of silicon in HF/H2O2/H2O solutions with Ag nanoparticles as catalyst agents was investigated. SEM observations and etch rate measurements were carried out as a function of the etching solution composition. Depending on the relative amount of HF and H2O2, different regimes of dissolution take place and a strong similarity with ...
C. Chartier, S. Bastide, C. Lévy-Clément   +2 more
openaire   +1 more source