Results 71 to 80 of about 50,856 (266)
Porous Silicon Carbide for MEMS
Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates.
Markus Leitgeb +4 more
doaj +1 more source
Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches
Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge.
Chen, Lingxiu +15 more
core +1 more source
(Invited) towards a vertical and damage free post-etch InGaAs fin profile: dry etch processing, sidewall damage assessment and mitigation options [PDF]
Based on current projections, III-Vs are expected to replace Si as the n-channel solution in FinFETs at the 7nm technology node. The realisation of III-V FinFETs entails top-down fabrication via dry etch techniques. Vertical fins in conjunction with high
Droopad, Ravi +12 more
core +1 more source
Catalyst feature independent metal-assisted chemical etching of silicon
We demonstrate metal-assisted chemical etching of Si substrates with consistent etching rates for a wide range of metal catalysts of dots and stripes in meshes and solid arrays.
Keorock Choi +3 more
openaire +1 more source
The Effect of Purcell Cavities on the Lifetime of Thermally Activated Delayed Fluorescent Emitters
A pressing challenge to OLED displays and lighting is to balance high efficiency and long operational lifetime in the deep blue spectrum. The Purcell effect can reduce the triplet density and hence the probability for destructive energy‐driven triplet annihilation events that limit the OLED lifetime. Here we study of the Purcell effect on two different
Sritoma Paul +4 more
wiley +1 more source
Nanoporous silicon-based surface patterns fabricated by UV laser interference techniques for biological applications [PDF]
The fabrication of selectively functionalized micropatterns based on nanostructured porous silicon (nanoPS) by phase mask ultraviolet laser interference is presented here.
Martín Palma, Raúl José +3 more
core +2 more sources
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak +14 more
wiley +1 more source
Proximal probe-like nano structuring in metal-assisted etching of silicon
We use silicon having multiple crystalline orientation domains and high metal doping in metal assisted chemical etching (MACEtch) in HF/H2O2. In device-quality silicon, MACEtch produces high-aspect ratio anisotropic (1-D) structures (wires, columns ...
Ersin Bahceci +6 more
doaj +1 more source
3D Patterning of Si by Contact Etching With Nanoporous Metals
Nanoporous gold and platinum electrodes are used to pattern n-type silicon by contact etching at the macroscopic scale. This type of electrode has the advantage of forming nanocontacts between silicon, the metal and the electrolyte as in classical metal ...
Stéphane Bastide +9 more
doaj +1 more source
High‐energy electron impact in plasma catalysis often causes excessive dissociation of active intermediates, limiting C2+ product selectivity. To address this challenge, a bio‐inspired stoma‐shell nanoarchitecture is designed to decouple electron impact from catalytic reaction zones.
Nan Zou +5 more
wiley +1 more source

