Results 51 to 60 of about 10,737 (241)

Porous Silicon Carbide for MEMS

open access: yesProceedings, 2017
Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates.
Markus Leitgeb   +4 more
doaj   +1 more source

Catalytic activity of noble metals for metal-assisted chemical etching of silicon [PDF]

open access: yesNanoscale Research Letters, 2012
Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a hydrofluoric acid solution without electrical bias. We have been studying the metal-assisted hydrofluoric acid etching of silicon using dissolved oxygen as an oxidizing agent.
Yae, Shinji   +3 more
openaire   +2 more sources

Influence of Surface Finish on the Tribological Performance of AlTiBN Coatings Deposited on Forming Tools

open access: yesAdvanced Engineering Materials, EarlyView.
Aluminum and nitride coatings are used in industry because they are hard, resist wear, and protect against oxidation. Adding boron can improve friction behavior and other properties. This study tests coatings on surfaces with different finishes. Results show smoother surfaces perform better, while rough ones wear faster, although coatings can reduce ...
Adrián Claver   +9 more
wiley   +1 more source

A Dislocation Perspective on Strength and Toughness in Ceramics

open access: yesAdvanced Engineering Materials, EarlyView.
Dislocations in ceramics enjoy a long but yet under‐appreciated history. The three research waves for dislocations in ceramics highlight the topic evolution over the last 90 years. This review focuses on the impact of dislocation on strength and toughness in ceramics.
Xufei Fang
wiley   +1 more source

Proximal probe-like nano structuring in metal-assisted etching of silicon

open access: yesAIP Advances, 2019
We use silicon having multiple crystalline orientation domains and high metal doping in metal assisted chemical etching (MACEtch) in HF/H2O2. In device-quality silicon, MACEtch produces high-aspect ratio anisotropic (1-D) structures (wires, columns ...
Ersin Bahceci   +6 more
doaj   +1 more source

3D Patterning of Si by Contact Etching With Nanoporous Metals

open access: yesFrontiers in Chemistry, 2019
Nanoporous gold and platinum electrodes are used to pattern n-type silicon by contact etching at the macroscopic scale. This type of electrode has the advantage of forming nanocontacts between silicon, the metal and the electrolyte as in classical metal ...
Stéphane Bastide   +9 more
doaj   +1 more source

Influence of Scan Strategies in Electron Beam Powder Bed Fusion on Solidification, Microstructure, and High‐Temperature Compressive Properties of γ′‐Strengthened Inconel 738LC

open access: yesAdvanced Engineering Materials, EarlyView.
Experiments and thermophysical simulations were conducted to investigate the electron beam powder bed fusion electron beam (PBF‐EB/M) process for the γ′‐strengthened nickel‐based superalloy Inconel 738LC. The results demonstrate the impact of process‐induced microstructural variations on high‐temperature mechanical behavior, providing a basis for ...
Jan Niklas Petenati   +11 more
wiley   +1 more source

Biomass Native Structure Into Functional Carbon‐Based Catalysts for Fenton‐Like Reactions

open access: yesAdvanced Functional Materials, EarlyView.
This study indicates that eight biomasses with 2D flaky and 1D acicular structures influence surface O types, morphology, defects, N doping, sp2 C, and Co nanoparticles loading in three series of carbon, N‐doped carbon, and cobalt/graphitic carbon. This work identifies how these structural factors impact catalytic pathways, enhancing selective electron
Wenjie Tian   +7 more
wiley   +1 more source

Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

open access: yesAIP Advances, 2016
Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE).
R. W. Wu   +7 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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