Results 71 to 80 of about 10,763 (241)
Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao +4 more
wiley +1 more source
Texturing of the Silicon Substrate with Nanopores and Si Nanowires for Anti-reflecting Surfaces of Solar Cells [PDF]
The paper presents the prospects of obtaining a functional multi-layer anti-reflecting coating of the front surface of solar cells by texturing the surface of the silicon by electrochemical etching.
A.A. Druzhinin +4 more
doaj
Kinked silicon nanowires-enabled interweaving electrode configuration for lithium-ion batteries
A tri-dimensional interweaving kinked silicon nanowires (k-SiNWs) assembly, with a Ni current collector co-integrated, is evaluated as electrode configuration for lithium ion batteries.
Georgiana Sandu +13 more
doaj +1 more source
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching
The current status of the investigation of defects in silicon nanowires and at the interface between Si and its oxide in 1D nanostructures is reviewed and discussed. The paper concentrates on nanowires produced by metal assisted chemical etching. The role of defects at the interface between the semiconductor and its oxide and of hydrogen in passivating
Fanciulli +11 more
openaire +5 more sources
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Electron transport characteristics of silicon nanowires by metal-assisted chemical etching
The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were
Yangyang Qi +5 more
doaj +1 more source
An electrically conductive FmocFF/MXene/hyaluronic acid hydrogel combines extracellular matrix‐like architecture, self‐healing behavior, oxidation‐resistant conductivity, and biochemical cues in a single scaffold. By enabling physiologically relevant electrical stimulation, the platform enhances fibroblast attachment, proliferation, and migration ...
Offir Loboda +7 more
wiley +1 more source
Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration. [PDF]
Huang W +8 more
europepmc +1 more source
Metal‐free carbon catalysts enable the sustainable synthesis of hydrogen peroxide via two‐electron oxygen reduction; however, active site complexity continues to hinder reliable interpretation. This review critiques correlation‐based approaches and highlights the importance of orthogonal experimental designs, standardized catalyst passports ...
Dayu Zhu +3 more
wiley +1 more source

