Results 31 to 40 of about 12,456 (281)

Comparing metal assisted chemical etching of N and P-type silicon nanostructures

Micro and Nano Engineering, 2023
Metal assisted chemical etching is a promising method for fabricating high aspect ratio micro- and nanostructures in silicon. Previous results have suggested that P-type and N-type silicon etches with different degrees of anisotropy, questioning the use ...
Hanna Ohlin, Thomas Frisk, Ilya Sychugov, Ulrich Vogt   +3 more
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Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching [PDF]

Технологія та конструювання в електронній апаратурі, 2013
The author suggests using the etching method MacEtch (metal-assisted chemical etching) for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of ...
I. R. Iatsunskyi
doaj   +2 more sources

Engineering high aspect-ratio silicon nanostructures

Physical Sciences and Technology, 2023
Large-area high density vertical silicon nanowire arrays are fabricated by metal-assisted chemical etching. Two-dimensional silica colloidal crystal template or laser interference lithography are used to create gold metal nanohole arrays on a silicon ...
Ali Belarouci, Roman Tkach, Dmytro Averin   +2 more
doaj   +1 more source

Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching [PDF]

Journal of Nanostructures, 2014
In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer.
P. Heydari, A. R. Asgharpour, M. Nazoktabar, M. Zahedinejad   +3 more
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Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etching

The Journal of Physical Chemistry C, 2023
The chemical transformations taking place during many of the reactions of the Si surface have been well documented, but the in situ dynamics of the reactions remain largely unexplored even for widely used electrochemical processes such as metal-assisted chemical etching (MACE).
Ayedh, Hussein M., Yli-Koski, Marko, Vähänissi, Ville, Savin, Hele, Oksanen, Jani, Li, Shengyang   +6 more
openaire   +3 more sources

Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching: Correlation between Structural and Optical Properties

Nanomaterials, 2023
Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and
Chohdi Amri, Shengzhong (Frank) Liu, Adel Najar   +2 more
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Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution

Electrochemistry Communications, 2019
Metal-assisted chemical etching plays a critical role in synthesizing GaN nanowires. In this work, GaN films grown on Si(111) substrates are immersed in CuSO4/HF etchant under UV illumination to fabricate nanowires.
Qi Wang, Guodong Yuan, Shuai Zhao, Wenqiang Liu, Zhiqiang Liu, Junxi Wang, Jinmin Li   +6 more
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Combined metal-assisted chemical etching and anisotropic wet etching for anti-reflection inverted pyramidal cavities on dendrite-like textured substrates

Results in Physics, 2019
A simple and low-cost method using the combination of metal-assisted chemical etching (MacEtch) and anisotropic wet etching was performed to fabricate anti-reflection inverted pyramidal cavities on dendrite-like textured silicon substrates.
Yu-Keng Lin, Yen-Shin Chen, Chun-Hway Hsueh   +2 more
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SERS performance of nanosilver ink inkjet printed on the surface of silicon nanowires

上海师范大学学报. 自然科学版, 2023
On the surface of silicon nanowires fabricated by a metal-assisted chemical etching method, silver nanoparticles/silicon nanowires composite structure substrates were prepared by inkjet printing nano-silver ink.
QIN Yufei, LIU Xinshuo, XIAO Guina
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XPS investigations of MOCVD tin oxide thin layers on Si nanowires array

Results in Physics, 2018
Tin oxide thin layers were grown by metal-organic chemical vapor deposition technique on the top-down nanostructured silicon nanowires array obtained by metal-assisted wet-chemical technique from single crystalline silicon wafers.
S.Yu. Turishchev, O.A. Chuvenkova, E.V. Parinova, D.A. Koyuda, R.G. Chumakov, M. Presselt, A. Schleusener, V. Sivakov   +7 more
doaj   +1 more source