Results 21 to 30 of about 12,456 (281)

Progress in metal-assisted chemical etching of silicon nanostructures

Procedia CIRP, 2020
Abstract Metal-assisted chemical etching (MACE) is a simple, low-cost method for fabricating silicon nanostructures. In this paper, the recent progress of MACE to control silicon nanostructures is reviewed. The principle of MACE is briefly summarized.
Zhishan Yuan
exaly   +2 more sources

Au-Capped GaAs Nanopillar Arrays Fabricated by Metal-Assisted Chemical Etching [PDF]

Nanoscale Research Letters, 2017
GaAs nanopillar arrays were successfully fabricated by metal-assisted chemical etching using Au nanodot arrays. The nanodot arrays were formed on substrates by vacuum deposition through a porous alumina mask with an ordered array of openings. By using an
Hidetaka Asoh, Ryota Imai, Hideki Hashimoto   +2 more
doaj   +2 more sources

Antibacterial enhancement of Ag‑decorated silicon nanostructures synthesized by metal‑assisted chemical etching

Chemical Physics Impact
Metal-assisted chemical etched (MACE) silicon nanostructures and their composites with Silver Nanoparticles (AgNPs) are investigated for antibacterial activity.
Shubham Gupta, Dhaneshwar Mishra, Suddhendu DasMahapatra, Ashish Kumar, Randhir Singh Rathore, Kulwant Singh   +5 more
doaj   +2 more sources

Metal-Assisted Chemical Etching of p‑type Si Nanopillars with Doping Level of 10²⁰ cm^-3. [PDF]

ACS Appl Electron Mater
Giulio F, Calciati L, Santamaria R, Bonaventura E, Acciarri M, Bonera E, Narducci D.   +6 more
europepmc   +3 more sources

Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration. [PDF]

Materials (Basel), 2023
Huang W, Wu J, Li W, Chen G, Chu C, Li C, Zhu Y, Yang H, Chao Y.   +8 more
europepmc   +3 more sources

Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon

ACS Applied Materials & Interfaces, 2016
Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide.
Yi Cui, Ruby Lai, Vijay K Narasimhan
exaly   +4 more sources

A review of the mechanism and optimization of metal-assisted chemical etching and applications in semiconductors [PDF]

Micro and Nano Systems Letters
Metal-Assisted Chemical Etching (MACE) is a technique for precisely forming nanostructures on semiconductor substrates, and it is actively researched in various fields such as electronic devices, optoelectronic devices, energy storage, and conversion ...
Kibum Jung, Jungchul Lee
doaj   +2 more sources

Decoding Directional Control in Metal-Assisted Chemical Etching via Catalyst Architecture. [PDF]

Adv Mater
Han Y, Jeong J, Cho H, Ahn Y, Park S, Kim H, Shin JY, Park MJ, Kim T, Um HD.   +9 more
europepmc   +3 more sources

Sub-5 nm Silicon Nanopore Sensors: Scalable Fabrication via Self-Limiting Metal-Assisted Chemical Etching. [PDF]

ACS Appl Mater Interfaces
De Ferrari F, Raja SN, Herland A, Niklaus F, Stemme G.   +4 more
europepmc   +2 more sources

Black GaAs by Metal-Assisted Chemical Etching [PDF]

ACS Applied Materials & Interfaces, 2018
Large area surface microstructuring is commonly employed to suppress light reflection and enhance light absorption in silicon photovoltaic devices, photodetectors, and image sensors. To date, however, there are no simple means to control the surface roughness of III-V semiconductors by chemical processes similar to the metal-assisted chemical etching ...
Paola Lova, Valentina Robbiano, Franco Cacialli, Davide Comoretto, Cesare Soci   +4 more
openaire   +4 more sources