Rapid formation of single crystalline Ge nanowires by anodic metal assisted etching [PDF]
, 2016 Germanium nanowires are produced by a novel approach, combining two well known electrochemical and metal assisted chemical etching. The metal assisted etching procedure is enhanced by incorporation of HF in the catalytic solution and application of a ...
Boarino, L. +2 more
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Chemical Excitation of Silicon Photoconductors by Metal-Assisted Chemical Etching
The Journal of Physical Chemistry C, 2023 The chemical transformations taking place during many of the reactions of the Si surface have been well documented, but the in situ dynamics of the reactions remain largely unexplored even for widely used electrochemical processes such as metal-assisted chemical etching (MACE).
Ayedh, Hussein M. +6 more
openaire +3 more sources
Progress in Nanoporous Templates: Beyond Anodic Aluminum Oxide and Towards Functional Complex Materials [PDF]
, 2019 Successful synthesis of ordered porous, multi-component complex materials requires a series of coordinated processes, typically including fabrication of a master template, deposition of materials within the pores to form a negative structure, and a third
Nonnenmann, Stephen S., Zhou, Zimu
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Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution
Electrochemistry Communications, 2019 Metal-assisted chemical etching plays a critical role in synthesizing GaN nanowires. In this work, GaN films grown on Si(111) substrates are immersed in CuSO4/HF etchant under UV illumination to fabricate nanowires.
Qi Wang +6 more
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Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy [PDF]
, 2010 GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 ...
Andreas Rudolph +10 more
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Results in Physics, 2019 A simple and low-cost method using the combination of metal-assisted chemical etching (MacEtch) and anisotropic wet etching was performed to fabricate anti-reflection inverted pyramidal cavities on dendrite-like textured silicon substrates.
Yu-Keng Lin +2 more
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Thermally assisted ion beam etching of polytetrafluoroethylene, a new technique for high aspect ratio etching of MEMS [PDF]
, 1996 In micromechanics, the etching of high aspect ratio structures in polymers is a prime technology. Normally, oxygen-based reactive ion etching or the LIGA technique are used to achieve this goal.
Berenschot, Erwin +4 more
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SERS performance of nanosilver ink inkjet printed on the surface of silicon nanowires
上海师范大学学报. 自然科学版, 2023 On the surface of silicon nanowires fabricated by a metal-assisted chemical etching method, silver nanoparticles/silicon nanowires composite structure substrates were prepared by inkjet printing nano-silver ink.
QIN Yufei, LIU Xinshuo, XIAO Guina
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XPS investigations of MOCVD tin oxide thin layers on Si nanowires array
Results in Physics, 2018 Tin oxide thin layers were grown by metal-organic chemical vapor deposition technique on the top-down nanostructured silicon nanowires array obtained by metal-assisted wet-chemical technique from single crystalline silicon wafers.
S.Yu. Turishchev +7 more
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Patterned Nanomagnetic Films [PDF]
, 2006 Nano-fabrication technologies for realising patterned structures from thin films are reviewed. A classification is made to divide the patterning technologies in two groups namely with and without the use of masks. The more traditional methods as well as
Lodder, J.C.
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