Results 41 to 50 of about 51,422 (275)

Functionalization of two-dimensional tungsten diselenide and MXene for tunable optical property [PDF]

, 2020
Since the discover of graphene in 2004, two-dimensional (2D) materials have gained tremendous attention because of their distinctive properties relative to their bulk form.
Wang, Yueyin
core  

High aspect ratio silicon dioxide-coated single-walled carbon nanotube scanning probe nanoelectrodes [PDF]

, 2009
We have fabricated high aspect ratio, hydrophilic nanoelectrodes from individual single-walled carbon nanotubes (SWNTs) mounted on conductive atomic force microscope (AFM) tips for use as electrochemical probes.
Ceres, Donato M., Chen, Jinyu, Collier, C. Patrick, Giapis, Konstantinos P., Narui, Yoshie   +4 more
core   +2 more sources

Gold- and Silver-Nanoparticle-Assisted Etching of p-Si and n-Si: A Discussion of Etching Behavior Based on Polarization Curves

Electrochemistry
Metal-assisted etching (metal-assisted chemical etching) is increasingly recognized as a crucial method for fabricating silicon (Si) nanostructures. This process involves the dissolution of Si both directly beneath metal catalysts (local etching) and at ...
Ayumu MATSUMOTO, Tatsuki HASHIGUCHI, Shinji YAE   +2 more
doaj   +1 more source

Progress in metal-assisted chemical etching of silicon nanostructures

Procedia CIRP, 2020
Abstract Metal-assisted chemical etching (MACE) is a simple, low-cost method for fabricating silicon nanostructures. In this paper, the recent progress of MACE to control silicon nanostructures is reviewed. The principle of MACE is briefly summarized.
Xidu Leng, Chengyong Wang, Zhishan Yuan
openaire   +1 more source

Metal-Assisted Etching of p-Type Silicon Using Patterned Platinum and Silver Films in Single Layers and Bimetal Double Layers

Electrochemistry
Metal-assisted etching (metal-assisted chemical etching) is a promising wet process for silicon (Si) microfabrication. The etching behavior depends on the catalyst metal, but detailed differences are not fully understood.
Ayumu MATSUMOTO, Takuma NAKAYAMA, Shinji YAE   +2 more
doaj   +1 more source

The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control [PDF]

, 1994
Very deep trenches (up to 200 µm) with high aspect ratios (up to 10) in silicon and polymers are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and negatively (i.e.
de Boer, Meint J., Elwenspoek, Michael Curt, Jansen, Henricus V., Legtenberg, R., Legtenberg, Rob   +4 more
core   +4 more sources

Low‐Cost, Large‐Scale Nanoporous Metals by Mechanical Alloying, Oxide Reduction, and Dealloying of Powders

Advanced Engineering Materials, EarlyView.
Powder metal processing provides scalable advantages in nanoporous (np) metal development. Mechanical alloying is used to produce unique precursors for hybrid nanopore formation by oxide reduction and dealloying. As demonstrated in np Ag, this approach improves process efficiency while promoting smaller ligaments and larger pores, both of which are ...
Mark A. Atwater, Oliver A. Fowler
wiley   +1 more source

Fabrication and Characterization of Inverted Silicon Pyramidal Arrays with Randomly Distributed Nanoholes

Micromachines, 2021
We report the fabrication, electromagnetic simulation and measurement of inverted silicon pyramidal arrays with randomly distributed nanoholes that act as an anti-reflectivity coating.
Yue Zhao, Kaiping Zhang, Hailiang Li, Changqing Xie   +3 more
doaj   +1 more source

Polarity in GaN and ZnO: Theory, measurement, growth, and devices [PDF]

, 2016
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev.
Akyol F., Akyol F., Alloing B., Als-Nielsen J., Ambacher O., Ambacher O., Bechstedt F., Bernardini F., Bowen D., Brillson L. J., Brubaker M. D., Brubaker M. D., Consonni V., Dal Corso A., de la Mata M., den Hertog M. I., Dreyer C. E., Duff A. I., Edgar J. H., Egerton R. F., Fiolhais C., Hestroffer K., Hestroffer K., Hirsch P., Huang D., Jasinski J., Koblmüller G., Kong X., Kuzmik J., Largeau L., Largeau L., Lautenschlaeger S., Lautenschlaeger S., Marchand H., Mariano A. N., Masui H., Morkoç H., Nishikawa S., Northrup J., Nye J. F., Palacios T., Parr R. G., Perillat-Merceroz G., Posternak M., Rouviere J. L., Sallet V., Seelmann-Eggebert M., She G. W., Shinohara K., Smorchkova I. P., Sonoda S., Spence J. C. H., Stringfellow G. B., Sumiya M., Sumiya M., Sumiya M., Sumiya M., Tian Z. R., Trampert A., Van Hove M. A., Wagner M. R., Wang X., Wang X., Won D., Zheng X., Zywietz T.   +65 more
core   +3 more sources

Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology

Advanced Engineering Materials, EarlyView.
We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham, Chenyu Wen, Mohammad Hadi Khaksaran, Won‐Yong Lee, Javier Cruz, Klas Hjort, Dongping Wu, Shi‐Li Zhang   +7 more
wiley   +1 more source