Results 141 to 150 of about 7,672 (257)

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin   +7 more
wiley   +1 more source

Dynamically Actuated Reconfigurable Topographical Surface Enables Active Control of Implant‐Associated Infections

open access: yesAdvanced Functional Materials, EarlyView.
A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash   +4 more
wiley   +1 more source

Boosting Conversion Efficiency in Zn3P2/InP Solar Cells Via Nanoscale Junction Engineering

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates the efficacy of selective area epitaxy (SAE) in enhancing the conversion efficiency of a Zn3P2${\rm Zn}_3{\rm P}_2$/InP heterojunction solar cell. The impact of the SAE pattern dimensions on the performance parameters is investigated. Small size opening limits Jsc because of current crowding whereas large size opening limits Voc
Raphael Lemerle   +14 more
wiley   +1 more source

Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS

open access: yesAdvanced Functional Materials, EarlyView.
The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae   +17 more
wiley   +1 more source

Metallic glasses [PDF]

open access: yesJournal of Non-Crystalline Solids, 1983
openaire   +2 more sources

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