Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Compositional complexity buffers free-volume sensitivity and serrated flow in metallic glasses. [PDF]
Bajpai A, Wang J, Raabe D.
europepmc +1 more source
An Investigation in Sub-Millimeter Channel Fabrication by the Non-Aqueous Electrolyte Jet Machining of Zr-Based Bulk Metallic Glasses. [PDF]
Guo C, Zhou A, He J, Xiao H, Li D.
europepmc +1 more source
A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash +4 more
wiley +1 more source
A molecular dynamics study on the mechanical response of thermal-pressure rejuvenated CuxZr100-x metallic glasses. [PDF]
Sayad S +3 more
europepmc +1 more source
Boosting Conversion Efficiency in Zn3P2/InP Solar Cells Via Nanoscale Junction Engineering
This study demonstrates the efficacy of selective area epitaxy (SAE) in enhancing the conversion efficiency of a Zn3P2${\rm Zn}_3{\rm P}_2$/InP heterojunction solar cell. The impact of the SAE pattern dimensions on the performance parameters is investigated. Small size opening limits Jsc because of current crowding whereas large size opening limits Voc
Raphael Lemerle +14 more
wiley +1 more source
Persistent Near-Linear Relationship Between Global Stress and Mean Atomic Bond Strain in Metallic Glasses Despite Significant Local Nonaffine Displacements. [PDF]
Thaiyanurak T, Xu D.
europepmc +1 more source
Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS
The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae +17 more
wiley +1 more source
Preparation and Application of Porous Metallic Glasses via Aging-Assisted Ultrasonic Vibration and Compression. [PDF]
Lin J +7 more
europepmc +1 more source

