Results 201 to 210 of about 1,083 (258)

A highly efficient triple band metasurface enabled absorber for 5G/6G millimeter wave applications. [PDF]

Sci Rep
Younis F, Khan O, Ahmad J, Qasim MJ, Luo H, Wang S.   +5 more
europepmc   +1 more source

Massive MIMO joint beamforming and power allocation via LMS with narwhal lemming optimization and fractional ResNeXt-based control. [PDF]

Sci Rep
Kamal MM, Yinsheng L, Ma T, Samkari HS, Allehyani MF, Sheraz M, Khushik MHAK, Qatawneh M, Chuah TC.   +8 more
europepmc   +1 more source

A high-frequency silicon-graphene-germanium barristor. [PDF]

Nat Commun
Wang X, Sun S, Qiao Z, Jiang H, Li C, Jiang H, Bai J, Song X, Li X, Wang X, Zhu X, Feng S, Li B, Liang J, Wang L, Xue Z, Ohno Y, Gao J, Di Z, Sun D, Liu C.   +20 more
europepmc   +1 more source

Progress in Avalanche Photodiodes for Laser Ranging. [PDF]

Sensors (Basel)
Liu Z, An N, Han X, Nuñez NE, Jin L, Liu C.   +5 more
europepmc   +1 more source

Polarization State of 77 GHz Millimetre Wave for the Large Helical Device

Polarization State of 77 GHz Millimetre Wave for the Large Helical Device
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Coplanar Versus Microstrip Measurements of Millimetre-Wave Devices

40th ARFTG Conference Digest, 1992
The purpose of this paper is to identify the differences between millimetre-wave small-signal scattering parameter device measurements on-wafer in coplanar and microstrip test formats. Calibration in coplanar and microstrip is examined to determine the measurement reference planes and possible calibration problems in the millimetre-wave frequency range.
Peter C. Walters, Roger D. Pollard, John R. Richardson, Patrice M. Gamand, Philippe R. Suchet   +4 more
openaire   +1 more source

A distributed approach for millimetre-wave electron device modelling

2006 European Microwave Integrated Circuits Conference, 2006
Electron device modelling at very high frequencies needs, as a preliminary step, the identification of suitable parasitic elements mainly describing the passive structure used for accessing the intrinsic device. However, when dealing with device modelling at millimetre-wave frequencies conventional lumped parasitic networks necessarily become less ...
Resca D., Santarelli A., Raffo A., Cignani R., Vannini G., Filicori F., Cidronali A.   +6 more
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Effects of tunnelling current on millimetre-wave IMPATT devices

International Journal of Electronics, 2014
In this paper, the influence of tunnelling on the RF performance of millimetre-wave (mm-wave) impact ionisation avalanche transit time (IMPATT) diodes operating in mixed tunnelling and avalanche transit time mode is studied by taking into account the parasitic series resistance of the device.
Aritra Acharyya, Moumita Mukherjee, J.P. Banerjee   +2 more
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Optical devices for millimetre-wave transmission

International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153), 2002
The development of practical and high-performance optoelectronic device technology at BT Laboratories (BTL) for millimetre-wave analogue optical links is described. Two-moded lasers (for the transmitter) and heterojunction bipolar phototransistors (for the receiver) are discussed in detail.
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Two-terminal millimetre wave devices

Annales Des Télécommunications, 1992
The basic principles of RF-power generation in the millimetre wave range for two-terminal semiconductor devices are described. The most important devices, Impatt diode and Gunn element, as well as less known structures like Baritt, Mitatt, Tunnett, PIN-avalanche, double-barrier, and Qwitt are presented.
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