Results 211 to 220 of about 1,121 (254)
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Two-terminal millimetre wave devices
Annales Des Télécommunications, 1992The basic principles of RF-power generation in the millimetre wave range for two-terminal semiconductor devices are described. The most important devices, Impatt diode and Gunn element, as well as less known structures like Baritt, Mitatt, Tunnett, PIN-avalanche, double-barrier, and Qwitt are presented.
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Indium Phosphide Transferred Electron Devices for Millimetre Wave Applications
1981 11th European Microwave Conference, 1981Details are given of the current development stage of CW indium phosphide transferred electron oscillators (TEOs) designed for mm-wave applications. The aims of low-noise, good reliability and thermal stability dictate the use of n+-n-n+ epitaxial material, details of which are given.
I.G. Eddison, I. Davies, D.M. Brookbanks
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Quantum well devices for millimetre wave applications
23rd European Microwave Conference, 1993, 1993Quantum well devices exhibit strong non-linearity with very short time responses which make them attractive for non-linear applications at very high frequencies. In this paper, we review several topics concerning the design, the fabrication and the frequency evaluation of these devices.
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A Comparison of the Performance of Millimetre-Wave Semiconductor Oscillator Devices and Circuits.
MTT-S International Microwave Symposium Digest, 2005A comparison of the commonly used millimetre-wave semiconductor devices is made; the Si IMPATT, GaAs TED and InP TED. The comparison is made on the basis of the primary characteristics of output power and efficiency as well as the secondary effects of amplitude and frequency stability, including a.m. and f.m. noise.
D.C. Smith, T.J. Simmons, M.R.B. Jones
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Millimetre-wave device modelling differences in microstrip and coplanar waveguide
1993 IEEE MTT-S International Microwave Symposium Digest, 2002The measurement of an active device produces results which depend on the transmission medium in which the device is embedded. These differences, insofar as a particular device is concerned, are related solely to its extrinsic elements, the intrinsic device being the same in all cases. Results are presented for on-wafer measurement and 2-D simulation of
P.C. Walters +3 more
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The relevance of quantum barrier devices to millimetre wave systems
IEE Colloquium on Terahertz Technology, 1995A “new” range of devices based on quantum mechanical tunnelling is receiving widespread interest for applications such as multipliers, oscillators, and harmonic mixers. These devices rely on monolayer thickness control of adjacent semiconductor layers to determine the tunnelling probability of incident electrons and so the current through the device ...
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Advances in nonlinear characterization of millimetre-wave devices for telecommunications
SPIE Proceedings, 2007Field Effect Transistors exhibit a variety of complicated dynamic and nonlinear interactions that affect millimetre-wave devices used for telecommunications. The dynamics include self heating, bias dependent change in trapped charge, and variations due to impact ionization.
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1987
In the millimetre wave frequency range, scaling becomes a problem so that copies of microwave devices become difficult to manufacture with adequate accuracy. Then special techniques suitable only for millimetre wave devices become necessary. This chapter concentrates on those techniques which are peculiar to ferrite devices operating at millimetre wave
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In the millimetre wave frequency range, scaling becomes a problem so that copies of microwave devices become difficult to manufacture with adequate accuracy. Then special techniques suitable only for millimetre wave devices become necessary. This chapter concentrates on those techniques which are peculiar to ferrite devices operating at millimetre wave
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Science and Technology of Millimetre Wave Components and Devices
2001Introduction to the Series Preface Contributors 1. Fundamental Limitations and Prospects of Semiconductor Device Application in Millimeter Wave Radio Systems V.E Lyubchenko 2. Multielement Arrays if Semiconductor Devices in MMW Transceivers V.E Lyubchenko 3. Active MMW Dielectric Waveguides V.E Lyubchenko 4.
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Millimetre-wave self-oscillating mixers using resonant tunnelling devices
23rd European Microwave Conference, 1993, 1993This paper reports an improved W-band self-oscillating mixer employing a resonant tunnelling diode. A conversion loss figure in the region of 25 dB has been obtained from a single device providing direct down-conversion from 87 GHz to 90 MHz. These devices offer the possibility of achieving conversion gain under suitable conditions.
G. Millington +5 more
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