Results 221 to 230 of about 2,886,152 (290)

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang   +9 more
wiley   +1 more source

Experimental Demonstration of Temporally Aware Fault‐Tolerant Sensor Fusion Using Memristive Associative Learning

open access: yesAdvanced Electronic Materials, EarlyView.
In dynamic driving scenarios, the proposed approach ensures only temporally aligned sensor inputs to make driving decisions, preventing false activations. By enabling selective hardware‐level learning, it achieves fast, reliable responses under noisy conditions.
Kapil Bhardwaj   +4 more
wiley   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

open access: yesAdvanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink   +6 more
wiley   +1 more source

Atomic‐Scale Mechanisms of Anisotropic Thermal Decomposition in GeSn Alloys With Stepwise Pinning

open access: yesAdvanced Electronic Materials, EarlyView.
Combining in situ TEM with DFT calculations, this work elucidates atomic‐scale anisotropic thermal decomposition in GeSn films, identifying laminar receding in defect‐free regions and stepwise pinning at stacking faults. Driven by crystallographic anisotropy and defect‐mediated energetic penalties, these findings establish a physical framework for ...
YiXin Wang   +6 more
wiley   +1 more source

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