Results 141 to 150 of about 24,527 (216)

Heteroepitaxial Growth of α‑Ga₂O₃ by MOCVD on <i>a</i>‑, <i>m</i>‑, <i>r</i>‑, and <i>c</i>‑Planes of Sapphire. [PDF]

Cryst Growth Des
Ngo KD, Sanyal I, Smith MD, Kuball M.
europepmc   +1 more source

RBFNN-Based PPy/GaN sensor array with wide dynamic range and sub-ppb detection for accurate ammonia identification in human exhaled breath. [PDF]

Microsyst Nanoeng
Jia Z, Wang W, Han D, Yan L, Guang J, Duan Q, Wang Y, Cheng Z, Wang G, Wang W, Sang S.   +10 more
europepmc   +1 more source

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics. [PDF]

ACS Nano
Liu J, Xing K, Li L, Zhao W, Stacey A, Robertson I, Broadway DA, Tetienne JP, Qi DC, Fuhrer MS, Hao Y, Ou Q.   +11 more
europepmc   +1 more source

Interfacial Polarization Switching in Al_0.92Sc_0.08N/GaN Heterostructures Grown by Sputter Epitaxy. [PDF]

Adv Sci (Weinh)
Wolff N, Schönweger G, Islam MR, Ding Z, Kübel C, Fichtner S, Kienle L.   +6 more
europepmc   +1 more source

AIXTRON MOCVD in China & Korea

III-Vs Review, 1995
openaire   +1 more source

High-performance p-type bilayer WSe₂ field effect transistors by nitric oxide doping. [PDF]

Nat Commun
Ghosh S, Sadaf MUK, Graves AR, Zheng Y, Pannone A, Ray S, Cheng CY, Guevara J, Redwing JM, Das S.   +9 more
europepmc   +1 more source

Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates. [PDF]

Nanomaterials (Basel)
Xu H, Li K, Tan Z, Jia J, Wang L, Chen S.   +5 more
europepmc   +1 more source

Unveiling Twist Domains in Monolayer MoS₂ through 4D-STEM and Unsupervised Machine Learning. [PDF]

Small Methods
Kimoto K, Cretu O, Harano K, Uesugi F, Kikkawa J, Aso K, Oshima Y, Matsumoto T, Sakuma Y.   +8 more
europepmc   +1 more source

UEC orders Aixtron MOCVD

III-Vs Review, 2003
openaire   +1 more source