Results 141 to 150 of about 2,771 (177)
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JOM, 1986
This paper examines the potentials and developmental status of metal organic chemical vapor deposition (MOCVD) as a commercial thin film deposition technique. Reactor design, deposit purity and uniformity characteristies are discussed with regard to scale-up. Critical process parameters and process contaminants are also reviewed.
N. E. Schumaker +3 more
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This paper examines the potentials and developmental status of metal organic chemical vapor deposition (MOCVD) as a commercial thin film deposition technique. Reactor design, deposit purity and uniformity characteristies are discussed with regard to scale-up. Critical process parameters and process contaminants are also reviewed.
N. E. Schumaker +3 more
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MRS Proceedings, 1993
ABSTRACTThe overall objective of this research is to develop source materials for doping AIGaAs. We compared Er(C5H5)3 to Er{N[Si(CH3)3]2)3 for purity, decomposition kinetics and doping of germanium films deposited from Ge(CH3)4 in a hydrogen atmosphere. Cyclopentadienyl erbium left large amounts of carbon both in pure metal films, and in the germanium
Anton C. Greenwald +2 more
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ABSTRACTThe overall objective of this research is to develop source materials for doping AIGaAs. We compared Er(C5H5)3 to Er{N[Si(CH3)3]2)3 for purity, decomposition kinetics and doping of germanium films deposited from Ge(CH3)4 in a hydrogen atmosphere. Cyclopentadienyl erbium left large amounts of carbon both in pure metal films, and in the germanium
Anton C. Greenwald +2 more
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SPIE Proceedings, 1986
Avalanche photodiodes (APD) based on bulk grown Cd0.7Hg0.3Te ( λ = 1.55 µm) offer significant advantages over the diodes fabricated from group III-V and group IV semiconductors. Metal Organic Chemical Vapour Deposition (MOCVD) is a well established technique for the growth of CMT (CdxHgl-xTe ...
G. T. Jenkin +4 more
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Avalanche photodiodes (APD) based on bulk grown Cd0.7Hg0.3Te ( λ = 1.55 µm) offer significant advantages over the diodes fabricated from group III-V and group IV semiconductors. Metal Organic Chemical Vapour Deposition (MOCVD) is a well established technique for the growth of CMT (CdxHgl-xTe ...
G. T. Jenkin +4 more
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MOCVD deposition of CoAl2O4 films
Electrochimica Acta, 2005Cobalt aluminate (CoAl2O4) thin films were grown in a low-pressure hot wall metal organic chemical vapour deposition (MOCVD) reactor on Si(1 0 0) and quartz substrates with a total pressure of 2 Torr using bis(?5-cyclopentadienyl)Co(II) [Co(?5-C 5H5)2] and aluminium dimethylisopropoxide [AlMe2(OiPr)] as precursors at 500 and 900 °C. Films showed a dark-
CARTA G +7 more
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MOCVD and PE-MOCVD of HTSC thin films
AIP Conference Proceedings, 1992High quality YBaCuO and TlBaCaCuO thin films were deposited on MgO, LaAlO3 and Ag substrates by standard thermal and plasma enhanced MOCVD. The growth was done in inverted vertical reactors designed to achieve stagnation point flow and extremely uniform deposition rates were achieved (±0.5%) over large areas (5 cm2). The films were characterized by SEM‐
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Ru cyclooctatetraene precursors for MOCVD
Dalton Trans., 2012A series of Ru(0) cyclooctatetraene complexes are presented with optimal properties for MOCVD (metal organic chemical vapour deposition) applications, including combinations of the two lowest melting points and lowest decomposition temperatures yet reported for such materials.
Tatsuya, Ando +4 more
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IEEE Transactions on Microwave Theory and Techniques, 1986
Low-noise HEMT AIGaAs/GaAs heterostructure devices have been developed using metal organic chemical vapor deposition (MOCVD). The HEMT's with 0.5-µm-long and 200-µm-wide gates have shown a minimum noise figure of 0.83 dB with an associated gain of 12.5 dB at 12 GHz at room temperature.
K. Tanaka +7 more
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Low-noise HEMT AIGaAs/GaAs heterostructure devices have been developed using metal organic chemical vapor deposition (MOCVD). The HEMT's with 0.5-µm-long and 200-µm-wide gates have shown a minimum noise figure of 0.83 dB with an associated gain of 12.5 dB at 12 GHz at room temperature.
K. Tanaka +7 more
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1992
Fur die plasmaunterstutzte Abscheidung von Verschleisschutzschichten aus der Gasphase wurden als Ausgangsverbindungen metallorganische Verbindungen (MOV) benutzt. Unter Verwendung von Tetrakis-(diethylamido)-titan und Tetrakis-(dimethylamido)-titan wurde der Einflus der Substrattemperatur zwischen 200 und 500 °C auf die wichtigsten Schichteigenschaften
H.-R. Stock, H. Berndt, P. Mayr
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Fur die plasmaunterstutzte Abscheidung von Verschleisschutzschichten aus der Gasphase wurden als Ausgangsverbindungen metallorganische Verbindungen (MOV) benutzt. Unter Verwendung von Tetrakis-(diethylamido)-titan und Tetrakis-(dimethylamido)-titan wurde der Einflus der Substrattemperatur zwischen 200 und 500 °C auf die wichtigsten Schichteigenschaften
H.-R. Stock, H. Berndt, P. Mayr
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Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 2003
Summary form only given. We demonstrated the first electrically pumped CW operation of a 1.26 /spl mu/m MOCVD grown GaInNAs VCSEL. Thus far this is the only report of an electrically pumped GalnNAs VCSEL grown by MOCVD, which is suitable for mass production. The threshold current and voltage of a 10 /spl times/ 10 /spl mu/m/sup 2/ aperture device under
S. Sato +4 more
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Summary form only given. We demonstrated the first electrically pumped CW operation of a 1.26 /spl mu/m MOCVD grown GaInNAs VCSEL. Thus far this is the only report of an electrically pumped GalnNAs VCSEL grown by MOCVD, which is suitable for mass production. The threshold current and voltage of a 10 /spl times/ 10 /spl mu/m/sup 2/ aperture device under
S. Sato +4 more
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