Results 181 to 190 of about 15,720 (226)
Some of the next articles are maybe not open access.
Physics World, 1989
Those of us who have heard Manijeh Razeghi's conference presentations will be familiar with the large amount of data she commands. Her book 'The MOCVD challenge' similarly presents the reader with a wide ranging and detailed study of the InP/InGaAs(P) materials system.
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Those of us who have heard Manijeh Razeghi's conference presentations will be familiar with the large amount of data she commands. Her book 'The MOCVD challenge' similarly presents the reader with a wide ranging and detailed study of the InP/InGaAs(P) materials system.
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Characterization Of MOCVD Films
SPIE Proceedings, 1989The far infrared reflectance technique has been used to characterize ZnTe and CdTe films grown using Metal Organic Chemical Vapor Deposition (MOCVD) on GaAs substrates. Carrier concentrations, derived from the reflectance measurements, decreased with increasing ZnTe film thickness as a result of the large lattice mismatch between ZnTe and GaAs.
W. H. Wright +3 more
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1992
Fur die plasmaunterstutzte Abscheidung von Verschleisschutzschichten aus der Gasphase wurden als Ausgangsverbindungen metallorganische Verbindungen (MOV) benutzt. Unter Verwendung von Tetrakis-(diethylamido)-titan und Tetrakis-(dimethylamido)-titan wurde der Einflus der Substrattemperatur zwischen 200 und 500 °C auf die wichtigsten Schichteigenschaften
H.-R. Stock, H. Berndt, P. Mayr
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Fur die plasmaunterstutzte Abscheidung von Verschleisschutzschichten aus der Gasphase wurden als Ausgangsverbindungen metallorganische Verbindungen (MOV) benutzt. Unter Verwendung von Tetrakis-(diethylamido)-titan und Tetrakis-(dimethylamido)-titan wurde der Einflus der Substrattemperatur zwischen 200 und 500 °C auf die wichtigsten Schichteigenschaften
H.-R. Stock, H. Berndt, P. Mayr
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Homoepitaxy of YBa2Cu3Ox by MOCVD
1996We have investigated the surface of high quality YBa2Cu2Ox single crystal substrates, fabricated from YBa2Cu3Ox single crystals grown by the crystal pulling method, for homoepitaxy. They have good crystallinity with χmin of under 2% evaluated by Rutherford backscattering spectrometry and good surface morphology with unit-cell steps observed by atomic ...
Hideaki Zama +5 more
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MRS Proceedings, 1993
ABSTRACTThe overall objective of this research is to develop source materials for doping AIGaAs. We compared Er(C5H5)3 to Er{N[Si(CH3)3]2)3 for purity, decomposition kinetics and doping of germanium films deposited from Ge(CH3)4 in a hydrogen atmosphere. Cyclopentadienyl erbium left large amounts of carbon both in pure metal films, and in the germanium
Anton C. Greenwald +2 more
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ABSTRACTThe overall objective of this research is to develop source materials for doping AIGaAs. We compared Er(C5H5)3 to Er{N[Si(CH3)3]2)3 for purity, decomposition kinetics and doping of germanium films deposited from Ge(CH3)4 in a hydrogen atmosphere. Cyclopentadienyl erbium left large amounts of carbon both in pure metal films, and in the germanium
Anton C. Greenwald +2 more
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2020
???????????????????????? ???????????????????? ?????????????????????????????????????????? ?????????????? ?????? ???????????????? ?????? MOCVD-?????????????????????????????? ??????-????????????????.
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???????????????????????? ???????????????????? ?????????????????????????????????????????? ?????????????? ?????? ???????????????? ?????? MOCVD-?????????????????????????????? ??????-????????????????.
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IEEE Transactions on Microwave Theory and Techniques, 1986
Low-noise HEMT AIGaAs/GaAs heterostructure devices have been developed using metal organic chemical vapor deposition (MOCVD). The HEMT's with 0.5-µm-long and 200-µm-wide gates have shown a minimum noise figure of 0.83 dB with an associated gain of 12.5 dB at 12 GHz at room temperature.
K. Tanaka +7 more
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Low-noise HEMT AIGaAs/GaAs heterostructure devices have been developed using metal organic chemical vapor deposition (MOCVD). The HEMT's with 0.5-µm-long and 200-µm-wide gates have shown a minimum noise figure of 0.83 dB with an associated gain of 12.5 dB at 12 GHz at room temperature.
K. Tanaka +7 more
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Optimization of MOCVD grown InGaP metamorphic buffers with MOCVD growth conditions and surfactant
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013InGaP metamorphic (MM) buffers are utilized in inverted metamorphic solar cells which offer high efficiency and provide for low cost and weight flexible solar cells. Metamorphic buffers are typically produced by metal organic chemical vapor deposition (MOCVD) technology and allow for a change in InGaP lattice constant while managing dislocation density
Chris W. Ebert +4 more
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2017
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???????????????????? ????????????-?????????????? ?????????????????????? ?? ???????????????????? ?????????????????????? ?????????????????????????????? ??????????????????, ?????????????????????? ?? ???????????????????? ???????????????? ?????? ???????????????? ?? ?????????????????? ???????????????????? 400???550 ???? ?????? ???????????? ???????? ??????????
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