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1991
YBCO thin films with a critical current density of 2.3 × 106 A/cm2 and 1×106 A/cm2 at 77.7 K and 0 T were prepared, in-situ, by metalorganic chemical vapor deposition (MOCVD) and PE-MOCVD. The films were formed in-situ on LaAlO3 at a substrate temperature of 570–730°C in 2–20 torr partial pressure of N2O.
J. Zhao +8 more
openaire +1 more source
YBCO thin films with a critical current density of 2.3 × 106 A/cm2 and 1×106 A/cm2 at 77.7 K and 0 T were prepared, in-situ, by metalorganic chemical vapor deposition (MOCVD) and PE-MOCVD. The films were formed in-situ on LaAlO3 at a substrate temperature of 570–730°C in 2–20 torr partial pressure of N2O.
J. Zhao +8 more
openaire +1 more source