Results 221 to 230 of about 40,351 (278)

MOCVD of HTS and GMR perovskites by aerosol and liquid delivery MOCVD

Journal of Alloys and Compounds, 1997
Abstract Aerosol and liquid delivery MOCVD are techniques that were developed to overcome the problems with thermally less stable alkaline earth metal precursors in the deposition of alkaline earth doped HTS and GMR perovskites. In this paper, we will discuss the advantages and disadvantages of these techniques compared to the conventional MOCVD ...
K.-H. Dahmen, M.W. Carris
exaly   +2 more sources

MOCVD technology for semiconductors

Materials Letters, 1997
This article commences with a brief review of the MOCVD process as it applies to semiconductors. The various precursors used, including metalorganic compounds, hydride gases, and dopants are discussed, together with the basic deposition process. Typical MOCVD systems used for R&D and manufacturing are described, including the constraints imposed by ...
exaly   +2 more sources

MOCVD Technology

JOM, 1986
This paper examines the potentials and developmental status of metal organic chemical vapor deposition (MOCVD) as a commercial thin film deposition technique. Reactor design, deposit purity and uniformity characteristies are discussed with regard to scale-up. Critical process parameters and process contaminants are also reviewed.
N. E. Schumaker, R. A. Stall, W. R. Wagner, L. G. Polgar   +3 more
openaire   +1 more source

MOCVD of CMT

SPIE Proceedings, 1986
Avalanche photodiodes (APD) based on bulk grown Cd0.7Hg0.3Te ( λ = 1.55 µm) offer significant advantages over the diodes fabricated from group III-V and group IV semiconductors. Metal Organic Chemical Vapour Deposition (MOCVD) is a well established technique for the growth of CMT (CdxHgl-xTe ...
G. T. Jenkin, J. Thompson, M. J. Hyliands, K. T. Woodhouse, V. Vincent   +4 more
openaire   +1 more source

MOCVD deposition of CoAl2O4 films

Electrochimica Acta, 2005
Cobalt aluminate (CoAl2O4) thin films were grown in a low-pressure hot wall metal organic chemical vapour deposition (MOCVD) reactor on Si(1 0 0) and quartz substrates with a total pressure of 2 Torr using bis(?5-cyclopentadienyl)Co(II) [Co(?5-C 5H5)2] and aluminium dimethylisopropoxide [AlMe2(OiPr)] as precursors at 500 and 900 °C. Films showed a dark-
CARTA G, CASARIN, MAURIZIO, EL HABRA N, NATALI M, ROSSETTO G, SADA, CINZIA, TONDELLO, EUGENIO, ZANELLA P.   +7 more
openaire   +3 more sources

MOCVD and PE-MOCVD of HTSC thin films

AIP Conference Proceedings, 1992
High quality YBaCuO and TlBaCaCuO thin films were deposited on MgO, LaAlO3 and Ag substrates by standard thermal and plasma enhanced MOCVD. The growth was done in inverted vertical reactors designed to achieve stagnation point flow and extremely uniform deposition rates were achieved (±0.5%) over large areas (5 cm2). The films were characterized by SEM‐
openaire   +1 more source

Ru cyclooctatetraene precursors for MOCVD

Dalton Trans., 2012
A series of Ru(0) cyclooctatetraene complexes are presented with optimal properties for MOCVD (metal organic chemical vapour deposition) applications, including combinations of the two lowest melting points and lowest decomposition temperatures yet reported for such materials.
Tatsuya, Ando, Naoki, Nakata, Kazuharu, Suzuki, Takahiro, Matsumoto, Seiji, Ogo   +4 more
openaire   +2 more sources

On the reaction mechanism of GaAs MOCVD

Journal of Crystal Growth, 1983
Abstract The reaction mechanism of TMG and AsH 3 on a GaAs substrate is discussed. The reaction of TMG was affected sensitively by the surface of GaAs substrate, and the surface reaction was quite different from the pyrolytic reaction of TMG in the vapor phase.
J. Nishizawa, T. Kurabayashi
openaire   +1 more source

MOCVD and all that

Physics World, 1989
Those of us who have heard Manijeh Razeghi's conference presentations will be familiar with the large amount of data she commands. Her book 'The MOCVD challenge' similarly presents the reader with a wide ranging and detailed study of the InP/InGaAs(P) materials system.
openaire   +1 more source