Results 91 to 100 of about 3,356 (188)

High-Q collective Mie resonances in monocrystalline silicon nanoantenna arrays for the visible light. [PDF]

open access: yesFundam Res, 2023
Zhang Z   +9 more
europepmc   +1 more source

Impact of grinding speed and pressure on material removal characteristics of monocrystalline silicon

open access: yesJin'gangshi yu moliao moju gongcheng, 2016
In order to study the damage of monocrystalline silicon,it is ground using a diamond grinding block at different normal forces and velocities.The grain size of resin bond diamond grinding block is 38 to 45 μm.The surface roughness value Ra,subsurface ...
YU Yuebin   +4 more
doaj  

Detection of subsurface microcracks after grinding of single crystal silicon wafer by polarized laser scattering

open access: yesJin'gangshi yu moliao moju gongcheng, 2020
In grinding process, there will inevitably produce subsurface microcrack damages on the monocrystalline silicon wafer. The subsurface microcrack damages of monocrystalline silicon wafer are nondestructively detected by the polarized laser scattering ...
LI Qingpeng, BAI Qian, ZHANG Bi
doaj  

Comprehensive Parametric Analysis of Silicon Solar Cell Performance Through Computational Modelling: A Comparative Study of Monocrystalline and Polycrystalline Devices Using MATLAB and Python

open access: yesITEGAM-JETIA
Accurate characterization of the diode ideality factor (n ) is fundamental to understanding recombination mechanisms and performance limitations in crystalline silicon solar cells.
Ravshanbek Rakhmatulaev   +4 more
doaj   +1 more source

Crack-deflection controlled 3D EVC of silicon for large-DOC high-quality machining

open access: yesEngineering Science and Technology, an International Journal
To overcome the trade-off between efficiency and quality in the precision cutting of monocrystalline silicon, this study investigates the influence of 3D elliptical vibration cutting (3D EVC) process parameters on its material removal characteristics ...
Jinguo Han   +10 more
doaj   +1 more source

MODELING ANALYSIS AND EXPERIMENTAL RESEARCH OF THE MATERIAL REMOVAL RATE OF THE MONOCRYSTALLINE SILICON IN THE COURSE OF THE ELETRICAL DISCHARGE MACHINING

open access: yesJixie qiangdu, 2017
Based on the feasibility of the discharge machining of the semiconductor material,it analyze several major factors which influences the material removal rate,including the open circuit voltage,peak current,pulse width and pulse interval.Using central ...
XIN Bin   +4 more
doaj  

Directional crystallization of films silicide on silicon substrate

open access: yesТехнологія та конструювання в електронній апаратурі, 2007
The processes of local nucleation and subsequent directed lateral crystallization of cobalt silicide phase on the surface of monocrystalline silicon have been investigated.
I. V. Belousov
doaj  

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