High-Q collective Mie resonances in monocrystalline silicon nanoantenna arrays for the visible light. [PDF]
Zhang Z +9 more
europepmc +1 more source
Impact of grinding speed and pressure on material removal characteristics of monocrystalline silicon
In order to study the damage of monocrystalline silicon,it is ground using a diamond grinding block at different normal forces and velocities.The grain size of resin bond diamond grinding block is 38 to 45 μm.The surface roughness value Ra,subsurface ...
YU Yuebin +4 more
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Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon. [PDF]
Xia J +5 more
europepmc +1 more source
Application of Flow Field Analysis in Ion Beam Figuring for Ultra-Smooth Machining of Monocrystalline Silicon Mirror. [PDF]
Wang Z +6 more
europepmc +1 more source
In grinding process, there will inevitably produce subsurface microcrack damages on the monocrystalline silicon wafer. The subsurface microcrack damages of monocrystalline silicon wafer are nondestructively detected by the polarized laser scattering ...
LI Qingpeng, BAI Qian, ZHANG Bi
doaj
Accurate characterization of the diode ideality factor (n ) is fundamental to understanding recombination mechanisms and performance limitations in crystalline silicon solar cells.
Ravshanbek Rakhmatulaev +4 more
doaj +1 more source
General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect. [PDF]
Wan W, Tang C, Zhang J, Zhou L.
europepmc +1 more source
Crack-deflection controlled 3D EVC of silicon for large-DOC high-quality machining
To overcome the trade-off between efficiency and quality in the precision cutting of monocrystalline silicon, this study investigates the influence of 3D elliptical vibration cutting (3D EVC) process parameters on its material removal characteristics ...
Jinguo Han +10 more
doaj +1 more source
Based on the feasibility of the discharge machining of the semiconductor material,it analyze several major factors which influences the material removal rate,including the open circuit voltage,peak current,pulse width and pulse interval.Using central ...
XIN Bin +4 more
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Directional crystallization of films silicide on silicon substrate
The processes of local nucleation and subsequent directed lateral crystallization of cobalt silicide phase on the surface of monocrystalline silicon have been investigated.
I. V. Belousov
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