Results 41 to 50 of about 3,356 (188)
In this work, diamond-like carbon (DLC) films used as anti-reflective coatings for monocrystalline silicon were deposited by magnetron sputtering for potential application in solar cells.
Xin Tan +3 more
doaj +1 more source
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave +14 more
wiley +1 more source
Surface‐charged N‐CQDs serve as both electrolyte additives and photocathode modifiers. Electrodeposited N‐CQDs on Cu2O form a stable composite, steering 4e− ORR toward water. A quasi‐solid electrolyte with N‐CQDs aids charge migration, electrode‐electrolyte interfacial compatibility and replenishes active sites.
Yang Wu +12 more
wiley +1 more source
Experimental investigation of semiconductor structures of the power source based on carbon-14
The article presents the research results of semiconductor silicon carbide (porous) structures with the implanted carbon-14. The results of experimental measurements collected data on parameters of photovoltaic energy conversion of light quanta into a ...
V.I. Chepurnov +4 more
doaj +1 more source
Optical Properties of Monocrystalline Silicon Nanowires
The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm.
P.O. Gentsar +3 more
openaire +3 more sources
Combining template stripping with a graphene‐inspired transfer yields continuous, transferable gold films at 6‐inch wafer scale with thicknesses approaching the atomic limit. The atomically smooth, near‐bulk‐quality films offer above 86% transmittance and sub‐20 Ω/square sheet resistance, serving as a universal platform for flexible optoelectronics ...
Dmitry Yakubovsky +24 more
wiley +1 more source
This study explores the compounds MPSi3 [M = Al, Ga, In] and introduces InPSi3 as a promising material for solar cell applications. Findings reveal stability, excellent band gaps, and strong optical absorption, suggesting that these materials are ideal candidates for advancing energy‐harvesting technologies. ABSTRACT In this study, a new semiconducting
S. K. Datta +4 more
wiley +1 more source
A three-dimensional molecular dynamics (MD) simulation is conducted to investigate the material removal mechanism of monocrystalline silicon by mechanical polishing at atomistic scale with diamond abrasives.
Lin Zhang +5 more
doaj +1 more source
By tuning the initial mixing temperature from 0°C to 80°C, the crystal size of SAPO‐34 can be adjusted from micro to nanoscale, reflecting a shift from classical single‐crystal growth at low temperatures to non‐classical polycrystalline aggregation at high temperatures.
Guanghua Liang +4 more
wiley +1 more source
Study on crack initiation scratching depth of monocrystalline silicon
As a typical brittle material, the key to achieve the plastic domain processing of monocrystalline silicon is to make the cutting depth less than the crack initiation cutting depth.
CHEN Zibin +4 more
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