Results 61 to 70 of about 148,069 (251)

1T‐to‐2H Phase Evolution During Epitaxial Growth of Transition Metal Dichalcogenides

Advanced Materials, EarlyView.
During MOCVD growth of MoS2 and WSe2, a transient metallic 1T phase emerges in early, edge‐rich, chalcogen‐deficient domains and declines as the films ultimately coalesce as 2H material. Together, experiments and ReaxFF simulations link domain size, edge stoichiometry, and vacancies to this evolution.
Andrew R. Graves, Yiru Zhu, Matin Salimi Irdmusa, Nadire Nayir, Thomas V. Mc Knight, Chen Chen, Ke Wang, Adri C. T. van Duin, Joan M. Redwing   +8 more
wiley   +1 more source

Molybdenum Disulfide Bilayers Hybridized With Reduced Graphene Oxide Nanosheets for Enhanced Hydrogen Evolution Reaction

Advanced Materials Interfaces, EarlyView.
The integration of reduced graphene oxide nanosheet‐hybridized molybdenum disulfide bilayers to enhance hydrogen evolution reaction capabilities unveils thrilling opportunities for strain engineering, defect manipulation, and sophisticated twist‐angle assemblies with 2D heterostructures.
Bruno Ferreira Brischi, Gabriela Frajtag, João Pedro da Silva Mariano, Laís Fernanda Medeiros Ruela, Gustavo Duarte Verçosa, Camila Desiderio Fernandes, Murilo Santhiago, Letícia Mariê Minatogau Ferro, Leandro Merces   +8 more
wiley   +1 more source

Interference effect on optical signals of monolayer MoS2

, 2015
Both Raman spectroscopy and the photoluminescence (PL) spectroscopy are intensively used in studying the characteristics of monolayer MoS2. However, the substrate-related interference effect will influence the optical signal intensities collected from ...
Zhang, Hui, Dai, Lun, Yi Wan, Wang, Wei, Yaoguang Ma, Ma, Yaoguang, Wang, Yilun, Wei Wang, Yilun Wang, Wan, Yi, Hui Zhang, Lun Dai   +11 more
core   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Adsorption and Diffusion of Lithium on MoS2 Monolayer: The Role of Strain and Concentration

International Journal of Electrochemical Science, 2013
Using first-principles calculations, we investigate the effects of external strain and lithium concentration on the adsorption and diffusion of lithium on the MoS2 monolayer.
H.J. Chen, J. Huang, X.L. Lei, M.S. Wu, G. Liu, C.Y. Ouyang, B. Xu   +6 more
doaj   +1 more source

Breakdown of High-Performance Monolayer MoS2 [PDF]

Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS2) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction.
Lembke, Dominik, Kis, Andras
core   +2 more sources

Metal Compound‐Based Non‐Enzymatic Electrochemical Cholesterol Sensors: Emerging Materials and Mechanistic Insights

Advanced Materials Interfaces, EarlyView.
This review discusses recent progress in metal complex‐based, non‐enzymatic electrochemical sensors for cholesterol detection. We examine metal oxides, metal sulfides, and hybrid nanomaterials, highlighting their catalytic mechanisms and material design strategies.
Longfei (Jack) Yin, Chao‐Tsen (Rora) Chen, Jacopo Giaretta, Thanh‐Qua Nguyen, Hoang‐Phuong Phan, Fariba Dehghani, Syamak Farajikhah   +6 more
wiley   +1 more source

Recent Advances in Light‐Addressable Electrochemistry for Spatially Resolved Applications

Advanced Materials Technologies, EarlyView.
This comprehensive review highlights light‐addressable electrochemistry as a powerful tool that uses light to control localized chemical reactions on unstructured semiconductor surfaces. The work evaluates advanced strategies to optimize electrode materials for enhanced spatial resolution and stability. Furthermore, it showcases diverse applications in
Nhi Trang Vo, Sina Jamali, Nam‐Trung Nguyen   +2 more
wiley   +1 more source

Dielectric Permittivity Tensor of Muscovite for Next Generation All Van Der Waals Broadband Photonic Components

Advanced Optical Materials, EarlyView.
Low‐index and low‐loss vdW muscovite represents an emerging robust dielectric platform for the creation of next‐generation all‐vdW nanophotonic architectures. Its utilization as a low‐index building‐block in all‐vdW multilayers enables extreme optical contrast when paired with MoS2, paving the way to the realization of few‐layer ultrathin DBS ...
Meri H. Hayrapetyan, Maksim L. Sargsyan, Davit A. Karakhanyan, Ani P. Khachatryan, Maria A. Levonyan, Dmitrii Litvinov, Maciej Koperski, Artsruni V. Margaryan, Makars Šiškins, Konstantin S. Novoselov, Davit A. Ghazaryan   +10 more
wiley   +1 more source

Achieving Direct Bandgap and Optoelectronic Enhancement in Scalable Stacked MoS2 Monolayers

Advanced Materials Interfaces
Near unity photoluminescence quantum yield in monolayer MoS2, makes it an excellent candidate for optoelectronic applications. In contrast, bulk MoS2 experiences a transition from a direct to an indirect bandgap, which diminishes its potential for ...
Muhammad Aamir Abbas, Timothy Ismael, Josh M. Sasson, Owen P. Harris, Matthew D. Escarra   +4 more
doaj   +1 more source