Results 211 to 220 of about 85,412 (269)

Graphene/Chalcogenide Heterojunctions for Enhanced Electric-Field-Sensitive Dielectric Performance: Combining DFT and Experimental Study. [PDF]

Nanomaterials (Basel)
Li B, Zhang N, Lei Y, Zhu M, Yang H.
europepmc   +1 more source

Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R‐MoS2 for Polarization‐Dependent Reconfigurable Optoelectronic Synapses

Advanced Science, EarlyView.
The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue, Jincheng Zhang, Yuying Wang, Yu Wang, Kuiwei Li, Yuxuan Chen, Fang Zhong, Qing Li, Ning Zhou, Chenying Yang, Yuchuan Shao, Tao Liang   +11 more
wiley   +1 more source

Bioinspired phototransistor with tunable sensitivity for low-contrast target detection. [PDF]

Light Sci Appl
Han R, Jia D, Li B, Feng S, Zhang G, Sun Y, Han Z, Liu C, Cheng HM, Sun DM.   +9 more
europepmc   +1 more source

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source

Spontaneous Room-Temperature Solid-State Reaction at the MoS₂/Ti Interface: Implications for Contact Engineering. [PDF]

ACS Appl Nano Mater
Karim B, Pirker L, Plšek J, Valeš V, Vondráček M, Hanušová M, Zólyomi V, Gastaldo M, Bajpai A, Ziewer J, Huang F, Honolka J, Frank O, Velický M, Kalbáč M.   +14 more
europepmc   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Compact Second-Harmonic Generation in the C‑Exciton Band of 3R-MoS₂ for Integrated Quantum Photonics. [PDF]

ACS Photonics
Bile A, de Ceglia D, Ceneda D, Larciprete MC, Centini M.   +4 more
europepmc   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Retina-Inspired 2D Semiconductor NIR Sensor with PRO Architecture for Photodetection. [PDF]

ACS Nano
Zhang X, Chen C, Zhou L, Jin M, Chen C, Guan Q, Wang S, Li T, Zhang S, Yu H, Lin S, Li N, Guo C, Xu J, Zhang G.   +14 more
europepmc   +1 more source

Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics

Advanced Electronic Materials, EarlyView.
A flipped electronically reconfigurable STO/LAO freestanding membrane is demonstrated and integrated with various host platforms via controlled transfer. Using ultra‐low‐voltage electron‐beam lithography, conductive nanostructures are created at the buried STO/LAO interface. This novel approach enables heterogeneous integration of flipped complex oxide
Ruiqi Sun, Ahmed Omran, Muqing Yu, Kyoungjun Lee, Keeyong Lee, Soli Sung, Sangho Oh, Patrick irvin, Jeremy Levy, Chang‐Beom Eom   +9 more
wiley   +1 more source