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Analyse prédictive de structures potentielles des dextrines MOS et MIMOS
Christophe Bliard, Agathe Martinez
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Boosting the adsorption and sensing performance of MoS<sub>2</sub> for SF<sub>6</sub> decomposition gases by non-metal atom doping:a DFT study. [PDF]
Tursun M, Liu Y, Yumaier A.
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Açaí Seeds for a Greener Future: Transforming Agro-Waste into Industrial Value. [PDF]
Gomes KS +4 more
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Dual-Stage Annealing for Enhanced Thulium Oxynitride Passivation on a 4H-SiC MOS Capacitor. [PDF]
Deng J, Chen J, Quah HJ.
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Designing Pancake-Bonded Heterodimers for Scanning Probe Microscopy. [PDF]
Matěj A, Kertesz M.
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Author Correction: Wafer-scale high-κ HfO<sub>2</sub> dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS<sub>2</sub> transistors. [PDF]
Zhang S +21 more
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Ionic current in MOS structures
Annales des Télécommunications, 2004A new approach of determining dynamic ionic current-voltage characteristic that is due to ion transport phenomenon in the oxide is presented. In this approach, the formulation of I–V characteristics ofmos device can be achieved through the use of the theoretical model of mobile ion distribution in oxides.
Hamid Bentarzi +2 more
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