Results 311 to 320 of about 37,917 (360)

Organoimido complexes of Mo(IV), Mo(V) and Mo(VI): preparation, structure and reactivity

Polyhedron, 1986
Abstract Two series of p-tolylimido (Ntol) complexes of Mo(VI), Mo(V) and Mo(IV) are described. One series, containing diethyldithiocarbamate ligands, is formed via oxygen atom abstraction from Mo(VI)O(Ntol)(S2CNEt2)2 using tertiary phosphines which affords the oxo-bridged Mo(V) dimer [Mo(Ntol)(S2CNEt2)2]2O and the Mo(IV) species Mo(Ntol)(S2CNEt2)2 ...
C.Y. Chou, D.D. Devore, S.C. Huckett, E.A. Maatta, J.C. Huffman, F. Takusagawa   +5 more
openaire   +1 more source

Interfacial reaction in MOS structures

Journal of Vacuum Science and Technology, 1976
The kinetics of the reduction of SiO2 in Au/SiO2/Si structures has been studied as a function of time, temperature, and annealing environment. Reduction of the oxide seems to be dependent on the presence of Au–Si eutectic as regions free of Au remained intact and samples of Au on bulk glass showed no reactions.
E. I. Alessandrini, D. R. Campbell, K. N. Tu   +2 more
openaire   +2 more sources

Analysis of Gold-Doped MOS Structures

physica status solidi (a), 1985
A theoretical analysis of the charge state of gold atoms within the silicon surface depletion region which explains the experimental variation of the minimum capacitance in gold-doped MOS structures is presented. To explain the positive shift of the threshold voltage a new physical model is proposed: the gold atoms with deep energy levels, Ec −0.55 eV ...
openaire   +1 more source

Instantaneous characteristics of MOS structures

Journal of Physics E: Scientific Instruments, 1977
A simple, rapid experimental method is proposed for obtaining the parameters of each MOS device from the profile of the derived curve dCn/dVg of the capacitance-voltage characteristic, which is closely correlated to the level of disorder existing in the I-S interfacial region.
B Balland, J J Marchand, P Pinard
openaire   +1 more source

The MOS Structure

2011
The metal-oxide-semiconductor (MOS) capacitor is an important structure, which is incorporated in the surface of most semiconductor devices. It forms an essential part of a MOSFET which in turn is an important device used in large-scale integration. A simple physical approach applied to MOS structure and a behavior of ideal MOS capacitor, which are ...
openaire   +1 more source

On the Role of Chlorine in the Passivation of MOS Structures

Physica Status Solidi (a), 1979
Chlorine is introduced into SiO2 films by means of oxidation of silicon slices in presence of vapour HCl, and by ion implantation method. Samples are contaminated with sodium and then BT-stressed. Concentration profiles of sodium were plotted vs. depth in oxide films by means of NAA method.
openaire   +1 more source

Complementary MOS-bipolar structure

IEEE Transactions on Electron Devices, 1968
Medium and large scale integrated arrays employing complementary MOS transistors, are capable of driving low capacitive loads only. An n-p-n bipolar transistor with an isolated collector is needed when an integrated circuit is required to drive large capacitive loads without deterioration in the maximum operating frequency.
H.C. Lin, R.R. Iyer, C.T. Ho
openaire   +1 more source

A MOS structure temperature characterization

Materials Science and Engineering: B, 1997
Abstract As is known, during the realization of semiconductor made components or devices, defects appear which lead to electronic trapped states. Their energies are all located in the forbidden band called the band gap. These states are called surface states and hinder the good functioning of such components or devices.
A. Bouzidi, A. Boudissa, Z. Benamara, M. Anani, H. Sehil, B. Akkal   +5 more
openaire   +1 more source

Tunneling in thin MOS structures

Journal of Vacuum Science and Technology, 1974
Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22–40 Å have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with
openaire   +1 more source

The Effects of Hydrogen on MOS Structures

1984
The threshold voltage of Pd/SiO2/Si devices alters markedly on exposure to hydrogen, making them useful gas detectors. Initially we have observed response ~ 5mV for 100 ppm partial pressure of H2 followed by a “forming” process during which the response rises to 500 mV for the same pressure.
M. Evans, J. M. Noras, P. R. C. Stevens, C. B. Thomas   +3 more
openaire   +1 more source