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Surface reactions on MOS structures
Journal of Applied Physics, 1974The morphology of surface reactions for Au/SiO2/Si structures has been studied as a function of environment. It was found that the reaction between thin gold film dots and thermally oxidized Si was strongly influenced by the partial pressure of oxygen.
E. I. Alessandrini +2 more
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Hydrogen sensitive MOS structures
1975 International Electron Devices Meeting, 1975It is shown that hydrogen in the ambient atmosphere changes the flatband voltage of palladium gate MOS-structures. The physical mechanisms behind this phenomenon are discussed. Experimental results on the detection of hydrogen in air, argon and nitrogen are given.
I. Lundstrom +2 more
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The Structure of Mo/Ta Superlattices
1988We grew superlattices of Mo and Ta on sapphire substrates using magnetically enhanced de triode sputtering, where a rotating substrate table alternately passes over the targets to create multilayers. Microprocessor control of the sputtering process allowed us to keep layer thicknesses constant to ±0.3%.
J. L. Makous, C. M. Falco
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MOS Transistor Structure and Operation
1993In this chapter we will give an overview of the MOS transistor as used in VLSI technology, and its behavior under operating biases will be explained qualitatively. First we will describe the basic MOSFET structure and then qualitatively discuss its current-voltage characteristics. During the last two decades, device lengths have been reduced from 20 μm
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Ion Instabilities in MOS Structures
12th International Reliability Physics Symposium, 1974Sodium and a few other alkali metal impurities, introduced during processing into the SiO2 gate insulator of MOS devices, are easily ionized and are sufficiently mobile even at low temperatures to cause a considerable drift of the electrical characteristics of MOS devices.
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Physical limitations of MOS structures
Solid-State Electronics, 1969The physical model of the MOS structure is re-assessed with particular reference to its usefulness in the understanding of the behaviour of MOSTs near the threshold or transition region and under high surface field and channel field conditions of operation.
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A Data Structure for MOS Circuits
20th Design Automation Conference Proceedings, 1983Chi-Yuan Lo, Hao N. Nham, Ajoy K. Bose
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Specific memory effect in MOS structures
Physica Status Solidi (a), 1979V. G. Litovchenko +4 more
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