Results 301 to 310 of about 37,917 (360)

Synthesis and structure of hexabenzyl-dimolybdenum (MoMo)

Polyhedron, 1986
Abstract The homoleptic benzyl Mo2(CH2Ph)6 has been obtained by reaction of either MoCl4(thf)2 or Mo2(OPri)6 with Mg(CH2Ph)2. The dark-red, sparingly soluble complex has been characterized by 1H and 13C NMR as well as by a solid-state structure analysis.
Sharon M. Beshouri, Ian P. Rothwell, Kirsten Folting, John C. Huffman, William E. Streib   +4 more
openaire   +1 more source

Structure of hexacarbonylbis(pentamethylcyclopentadienyl)dimolybdenum(Mo–Mo)

Acta Crystallographica Section C Crystal Structure Communications, 1988
[Mo 2 (C 5 Me 5 ) 2 (CO) 6 ] cristallise dans le systeme monoclinique avec le groupe d'espace P2 1 /n.
W. Clegg, N. A. Compton, R. J. Errington, N. C. Norman   +3 more
openaire   +1 more source

Photoemission study of the electronic structure of Mo and Mo oxides

Journal of Physics C: Solid State Physics, 1983
The electronic structure of Mo and Mo oxides has been studied using ultraviolet and X-ray photoelectron spectroscopy. The valence band spectrum of Mo(100) is compared with calculations of the density of states (DOS). A fairly good agreement of the characteristic peak positions with the DOS maxima is obtained.
F Werfel, E Minni
openaire   +1 more source

Electroluminescence of silicon nanocrystals in MOS structures

Applied Physics A, 2002
We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiOx (x < 2) thin film deposited by plasma-enhanced chemical vapor deposition. After deposition the samples were annealed at high temperature (> 1000 °C) to induce the separation of the Si and the SiO2 phases with
G Franzò, A Irrera, E Ceretta Moreira, M Miritello, F Iacona, D Sanfilippo, G Di Stefano, PG Fallica, F Priolo   +8 more
openaire   +4 more sources

Instabilities of MOS Structure

Japanese Journal of Applied Physics, 1967
The surface charge density of MOS structure is strongly affected by the bias and temperature (BT) treatment. Ordinary and “clean” MOS diodes are prepared by using the (100) and (111) planes. The results on the “clean” diodes during the BT treatment at high electric field of both polarities show the presence of an electrochemical reaction.
Yoshio Miura, Yasuo Matukura
openaire   +1 more source

Characterization of MOS Structures with Buried Layers

Physica Status Solidi (a), 1978
After boron implantation into n-type silicon the shapes of the MOS C–V curves differ considerably from those of non-implanted samples. A general equivalent network is presented. Beside the p-n junctions other components due to lateral current flow are included in this network. Admittance and crosstalk experiments verify the proposed model.
W. R. Fahrner, E. Klausmann
openaire   +1 more source

Structural changes in the Mo(100) reconstruction

Physical Review Letters, 1993
The clean Mo(100) surface reconstructs at low temperature forming a commensurate [ital c](7 [radical]2 [times] [radical]2 )[ital R]45[degree] displacement wave. LEED studies over the range 10 to 300 K reveal a change in the harmonic content of this wave at intermediate temperatures corresponding to a sharpening of antiphase domain walls as [ital T] is ...
, Daley, , Felter, , Hildner, , Estrup
openaire   +2 more sources

Phonons in (001) Mo/W/Mo and W/Mo/W layer structures

Physica Scripta, 1995
We have calculated the frequencies and local mode densities for phonons in (001) Mo/W/Mo and W/Mo/W sandwiches by means of the surface Green function matching method. A force constant model including two-body and three-body interactions up to third neighbours, which gives a reasonably accurate description of the bulk dispersion relations, has been ...
L Fernández-Alvarez, V R Velasco
openaire   +1 more source

Surface Roughness Scattering in MOS Structures

2010
The comprehensive Ando’s surface roughness (SR) model examined for nMOSFETs. Four distinct source terms contribute in SR scattering. Relative strength of these contributing source terms are evaluated and compared. The most influential term turned out to be due to scattering with the “physical steps” at the interface.
Shah, R., DeSouza, M.
openaire   +2 more sources

Thermally stimulated ionic conduction in MOS (MoSiO2Si) structures

Journal of Electrostatics, 1977
Abstract Results on thin films of silicon dioxide made by a low temperature process (oxidation of silane SiH4) are presented. We used a MOS structure MoSiO2Si for our investigations. Both capacitance-voltage and thermostimulated current measurements were made. A high ionic contamination (Na+) of 8 × 10−2 has been found.
Manifacier, J.-C., Parot, P., Fillard, J.-P.   +2 more
openaire   +1 more source