Results 161 to 170 of about 156,764 (197)

Characterization of MOS Structures with Buried Layers

Physica Status Solidi (a), 1978
After boron implantation into n-type silicon the shapes of the MOS C–V curves differ considerably from those of non-implanted samples. A general equivalent network is presented. Beside the p-n junctions other components due to lateral current flow are included in this network. Admittance and crosstalk experiments verify the proposed model.
W. R. Fahrner, E. Klausmann
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Electroluminescence of silicon nanocrystals in MOS structures

Applied Physics A, 2002
We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiOx (x < 2) thin film deposited by plasma-enhanced chemical vapor deposition. After deposition the samples were annealed at high temperature (> 1000 °C) to induce the separation of the Si and the SiO2 phases with
G Franzò, A Irrera, E Ceretta Moreira, M Miritello, F Iacona, D Sanfilippo, G Di Stefano, PG Fallica, F Priolo   +8 more
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Electronic structure of metallic superlattices: Mo/V

Physical Review B, 1992
The electronic structure for a metallic superlattice system, Mo/V, has been calculated using the linear muffin-tin orbital method in the atomic-sphere approximation (ASA). Total energies have been calculated in the local-density approximation (LDA). Emphasis has been given to the electronic-density variation in these materials in order to understand ...
, Papadia, , Karlsson, , Nilsson, , Jarlborg   +3 more
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Structural changes in the Mo(100) reconstruction

Physical Review Letters, 1993
The clean Mo(100) surface reconstructs at low temperature forming a commensurate [ital c](7 [radical]2 [times] [radical]2 )[ital R]45[degree] displacement wave. LEED studies over the range 10 to 300 K reveal a change in the harmonic content of this wave at intermediate temperatures corresponding to a sharpening of antiphase domain walls as [ital T] is ...
, Daley, , Felter, , Hildner, , Estrup
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Ion Instabilities in MOS Structures

12th International Reliability Physics Symposium, 1974
Sodium and a few other alkali metal impurities, introduced during processing into the SiO2 gate insulator of MOS devices, are easily ionized and are sufficiently mobile even at low temperatures to cause a considerable drift of the electrical characteristics of MOS devices.
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High-spin level structure in Mo-94,Mo-95

2009
High-spin level structures of 94,95Mo have been reinvestigated via the 16O(82Se,xnγ)94,95Mo(x=4,3) reactions at E(82Se)=460 MeV. The previously reported level schemes of these two nuclei have been largely modified up to ∼11 MeV in excitation energy due to identifications of some important linking transitions.
ZHANG YH, HASEGAWA M, GUO WT, LIU ML, ZHOU XH, DE ANGELIS G, AXIOTIS TM, GADEA A, MARGINEAN N, MARTINEZ, NAPOLI DR, RUSU C, PODOLYAK Z, UR C, BAZZACCO D, BRANDOLINI, FRANCO, LUNARDI, SANTO, LENZI, SILVIA MONICA, MENEGAZZO R, SCHWENGNER R, GARGANO A, VON OERTZEN W, TAZAKI S.   +22 more
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MOS Transistor Structure and Operation

1993
In this chapter we will give an overview of the MOS transistor as used in VLSI technology, and its behavior under operating biases will be explained qualitatively. First we will describe the basic MOSFET structure and then qualitatively discuss its current-voltage characteristics. During the last two decades, device lengths have been reduced from 20 μm
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Targeting RNA structures with small molecules

Nature Reviews Drug Discovery, 2022
Quentin M. R. Gibaut, Robert T Batey, Matthew D Disney   +2 more
exaly  

Specific memory effect in MOS structures

Physica Status Solidi (a), 1979
V. G. Litovchenko, I. P. Lisovskii, R. O. Litvinov, H. Flietner, W. Fussel   +4 more
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MOS Structures

1993
Robert W. Dutton, Zhiping Yu
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