Results 201 to 210 of about 28,059 (259)
Some of the next articles are maybe not open access.
1991
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is the most widely used SOI device. The present chapter is devoted to single-gate SOI MOSFETs. Other types of SOI MOSFETs devices, such as multiple-gate SOI MOSFETs, dynamic-threshold MOSFETs, power MOS devices, etc., will be described in Chapter 6.
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is the most widely used SOI device. The present chapter is devoted to single-gate SOI MOSFETs. Other types of SOI MOSFETs devices, such as multiple-gate SOI MOSFETs, dynamic-threshold MOSFETs, power MOS devices, etc., will be described in Chapter 6.
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Physics Bulletin, 1986
In this article Dr Pepper concentrates on the localisation and quantisation effects found in semiconductor devices. Dr Pepper was chosen as the first Mott lecturer and talked on the same theme under the title 'Exploring two-dimensional physics with semiconductor devices' at the Solid State Physics conference in Reading on 20 December ...
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In this article Dr Pepper concentrates on the localisation and quantisation effects found in semiconductor devices. Dr Pepper was chosen as the first Mott lecturer and talked on the same theme under the title 'Exploring two-dimensional physics with semiconductor devices' at the Solid State Physics conference in Reading on 20 December ...
openaire +1 more source
2014
?????????????? SMD-1 ?????????????????? ?????????????????????????? ?????????????? ?? ???????????????????????? ?????????????????????? ???????????????????????? ?? ???????????????????????? ???? ?????????????? ?????????????????????????? ?? ????????????????????.
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?????????????? SMD-1 ?????????????????? ?????????????????????????? ?????????????? ?? ???????????????????????? ?????????????????????? ???????????????????????? ?? ???????????????????????? ???? ?????????????? ?????????????????????????? ?? ????????????????????.
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Gate-All-Around Nanowire MOSFET With Catalytic Metal Gate For Gas Sensing Applications
IEEE Nanotechnology Magazine, 2013Rajni Gautam, Manoj Saxena, R S Gupta
exaly
Comprehensive study of a 4H–SiC MES–MOSFET
Physica E: Low-Dimensional Systems and Nanostructures, 2015Hamid Amini Moghadam
exaly