Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. [PDF]
Nanomaterials (Basel)Wang P +10 more
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Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics. [PDF]
Sensors (Basel)Lu Y +6 more
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Performance evaluation of a bi-directional synchronous H6 inverter for AC/DC system interaction with SiC and Si-Based at different switching frequencies. [PDF]
PLoS OneAlshammari MS, Namadmalan A, Duffy M.
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Breaking the p-type doping barrier in β-Ga<sub>2</sub>O<sub>3</sub>: a GaN-based heterojunction bipolar transistor with high gain, high breakdown, and RF capability. [PDF]
RSC AdvThan PH, Than TQ, Takaki Y.
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TCAD Simulation of STI Depth and SiO<sub>2</sub>/Silicon Interface Trap Modulation Effects on Low-Frequency Noise in HZO-Based Nanosheet FETs. [PDF]
Nanomaterials (Basel)Lee W, Lee J.
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High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET. [PDF]
Sci RepLodhi MEA +4 more
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Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress. [PDF]
Micromachines (Basel)Makhdoom S +6 more
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Simultaneously Estimating Process Variation Effect, Work Function Fluctuation, and Random Dopant Fluctuation of Gate-All-Around Silicon Nanosheet Complementary Field-Effect Transistors. [PDF]
Nanomaterials (Basel)Kola SR, Li Y.
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Extremely Low Thermal Resistance of β-Ga2O3 MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging. [PDF]
ACS Appl Mater InterfacesQu Z +10 more
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