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Flat-Band Potential of a Semiconductor: Using the Mott–Schottky Equation

Journal of Chemical Education, 2007
Semiconductors are an important category of materials involved in many applications in modern society. One such application revolves around the search for efficient sustainable forms of energy, in this case the use of semiconductors to assist in the conversion of light to electrical energy.
K. Gelderman, L. Lee, S. W. Donne
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Mott–Schottky analysis of polycrystalline copper(I) bromide in aqueous electrolytes

Journal of Electroanalytical Chemistry, 1998
Abstract Polycrystalline electrodes of copper(I) bromide were investigated at room temperature in aqueous electrolytes. After long-time stabilisation in a 0.001 M CuSO 4 solution, an open-circuit potential of about 0.27 V (SHE) was observed. Nonideal interfacial capacitance values were determined from impedance measurements at frequencies between ...
P Knauth, Y Massiani
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Semiconductors and Mott-Schottky Plots

2013
When a conductive electrode (e.g., metallic or glassy carbon) is in contact with an electrolytic solution, the excess electronic charge is accumulated at the electrode surface and charge distribution occurs in the solution only. This is related to the fact that as the number of charged species increases, the space in which the redistribution of charges
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MoC based Mott–Schottky electrocatalyst for boosting the hydrogen evolution reaction performance

Sustainable Energy & Fuels, 2020
Searching for promising HER electrocatalysts is an urgent task for the practical application of hydrogen production by water electrolysis.
Xinyang Ji   +8 more
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Flat band potential determination of NbSe2 photoelectrode using Mott-Schottky plot

AIP Conference Proceedings, 2019
Semiconductors are an important category of materials involved in many applications in modern society. One such application revolves around the search for efficient and sustainable forms of energy, where in the use of semiconductors to assist conversion of light to electrical energy. Photoelectrochemical solar cell, though finding meagre application in
Kunjal Patel   +7 more
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The Preparation of TiO2 Electrodes with Minimum Mott‐Schottky Frequency Dispersion

Journal of The Electrochemical Society, 1982
A preparation procedure for is described which produces electrodes with nearly ideal Mott‐Schottky plots in . The Mott‐Schottky plots are linear and exhibit slopes and intercepts nearly independent of applied frequency from 105 Hz to 50 KHz. Based on Mott‐Schottky intercepts and photocurrent onset potentials, vs. SCE in . Frequency dispersion increases
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Measurement method for carrier concentration in TiO2 via the Mott–Schottky approach

Thin Solid Films, 2011
Abstract In direct contrast to the way in which silicon is precisely doped for integrated circuit applications in order to optimize device performance, there is little nuanced understanding of the correlation between TiO 2 doping level, charge carrier concentration, and the operation of TiO 2 -based photocatalysts, dye-sensitized solar cells, and ...
Meredith C.K. Sellers   +1 more
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Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors

2019
The application of Mott-Schottky (MS) relation in organic devices often leads to erroneous results. In particular, the doping density, extracted using this method found to vary with the thickness of semiconductor. We address the limitations in using MS relationship for organic metal-insulator-semiconductor (MIS) capacitors as a consequence of deviation
Manda Prashanth Kumar   +2 more
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Homologous heterostructures of Ni/NiFeO Mott–Schottky for alkaline water electrolysis

Journal of Materials Chemistry A
An in situ strategy is proposed to fabricate a Mott–Schottky Ni/NiFeO catalyst composed of Ni nanoparticles over NiFeO nanosheets, which leads to charge transfer from Ni to Fe and promotes the bifunctional activity for the HER and OER.
Manna Liu   +7 more
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Surface treatment of Si by annealing and effect on Mott-Schottky plots

Electrochimica Acta, 1992
Abstract Annealing has a healing effect on the surface of p-Si. This leads to a shift of the flatband potential of up to 2V. This effect was studied by capacitance measurements (Mott—Schottky plots) on p-Si samples in acetonitrile in a wide range of acceptor concentrations from NA = 1 E+21 up to NA = 1 E+25.
C. Zeyer, H.R. Grüniger
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