Results 271 to 280 of about 59,134 (299)
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Compensating the Effects of Frequency Dispersion in Mott–Schottky Analyses of Passive Films
Corrosion, 2017The use of constant phase elements (CPE) to overcome the problem of frequency dispersion in Mott–Schottky (MS) tests has not been a common practice until recently. The present study is an effort to compensate the effects of frequency dispersion in individual single-frequency MS tests by using CPE.
Mohammad Naser Kakaei +3 more
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Homologous heterostructures of Ni/NiFeO Mott–Schottky for alkaline water electrolysis
Journal of Materials Chemistry AAn in situ strategy is proposed to fabricate a Mott–Schottky Ni/NiFeO catalyst composed of Ni nanoparticles over NiFeO nanosheets, which leads to charge transfer from Ni to Fe and promotes the bifunctional activity for the HER and OER.
Manna Liu +7 more
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Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors
2019The application of Mott-Schottky (MS) relation in organic devices often leads to erroneous results. In particular, the doping density, extracted using this method found to vary with the thickness of semiconductor. We address the limitations in using MS relationship for organic metal-insulator-semiconductor (MIS) capacitors as a consequence of deviation
Manda Prashanth Kumar +2 more
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Accelerating peroxymonosulfate-based Fenton-like reaction via Mott-Schottky heterojunction
Applied Catalysis B: Environmental, 2023Shouchun Ma, Yina Guan, Yubo Zhao
exaly
On the Interpretation of Mott‐Schottky Plots Determined at Semiconductor/Electrolyte Systems
Journal of The Electrochemical Society, 1975R. De Gryse +3 more
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Electrochimica Acta
A theory is developed for the anomalous space-charge capacitance of a semiconductor electrode with ubiquitous random surface roughness. An equation for the space-charge capacitance of a rough semiconductor system is derived as a functional of the roughness power spectrum.
Parveen Kumar, Rama Kant
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A theory is developed for the anomalous space-charge capacitance of a semiconductor electrode with ubiquitous random surface roughness. An equation for the space-charge capacitance of a rough semiconductor system is derived as a functional of the roughness power spectrum.
Parveen Kumar, Rama Kant
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Interpretation of Mott-Schottky and Defect Profiles in Perovskite Solar Cells
Proceedings of the International Conference on Impedance Spectroscopy and Related Techniques in Metal Halide Perovskites, 2020Sandheep Ravishankar +2 more
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