Interpretation and use of Mott–Schottky plots at the semiconductor/electrolyte interface
J. Chem. Soc., Faraday Trans., 1996The Poisson Boltzmann equation is solved for a semiconductor without making the usual assumption of no majority carriers in the depletion layer. The capacative behaviour of the semiconductor is combined with that of the Helmholtz layer to provide a complete description of the potential distribution in the electrolyte and in the semiconductor for all ...
W. John Albery +2 more
openaire +1 more source
Promoting Pt catalysis for CO oxidation via the Mott–Schottky effect
Nanoscale, 2019“Mott–Schottky modulated catalysis” on Pt nanoparticles was reported to promote Pt catalysis for CO oxidation.
Peiwen Wu +10 more
openaire +2 more sources
Semiconductors and Mott-Schottky Plots
2013When a conductive electrode (e.g., metallic or glassy carbon) is in contact with an electrolytic solution, the excess electronic charge is accumulated at the electrode surface and charge distribution occurs in the solution only. This is related to the fact that as the number of charged species increases, the space in which the redistribution of charges
openaire +1 more source
Measurement method for carrier concentration in TiO2 via the Mott–Schottky approach
Thin Solid Films, 2011Abstract In direct contrast to the way in which silicon is precisely doped for integrated circuit applications in order to optimize device performance, there is little nuanced understanding of the correlation between TiO 2 doping level, charge carrier concentration, and the operation of TiO 2 -based photocatalysts, dye-sensitized solar cells, and ...
Meredith C.K. Sellers +1 more
openaire +1 more source
The Preparation of TiO2 Electrodes with Minimum Mott‐Schottky Frequency Dispersion
Journal of The Electrochemical Society, 1982A preparation procedure for is described which produces electrodes with nearly ideal Mott‐Schottky plots in . The Mott‐Schottky plots are linear and exhibit slopes and intercepts nearly independent of applied frequency from 105 Hz to 50 KHz. Based on Mott‐Schottky intercepts and photocurrent onset potentials, vs. SCE in . Frequency dispersion increases
openaire +1 more source
Mott‐Schottky Analysis of Nanometer‐Scale Thin‐Film Anatase TiO2
Journal of The Electrochemical Society, 1997Recently, much attention has been focused on the use of nanostructured metal oxide semiconductors for various applications, such as electrochromic windows, photocatalytic devices, lithium-ion batteries, dielectrics in integrated circuits, and dye-sensitized TiO{sub 2} solar cells.
R. van de Krol +2 more
openaire +3 more sources
An analysis of the Mott-Schottky behavior in ZnO-Bi2O3 based varistors
Journal of Applied Physics, 1995A series of non-converging frequency-dependent Mott–Schottky straight lines can lead to significant errors in the calculation of the device-related parameters (such as; built-in-potential, barrier height, carrier concentration, etc.) for the ZnO-Bi2O3 based varistors.
openaire +1 more source
Variable Mott-Schottky plots acquisition by potentiodynamic electrochemical impedance spectroscopy
Journal of Solid State Electrochemistry, 2005Potentiodynamic electrochemical impedance spectroscopy provides extraction of potential-dependent space charge layer capacitance from potentiodynamic impedance spectra of non-stationary semiconductor–electrolyte interface. The new technique has been applied for acquisition of Mott-Schottky plots of cathodically treated TiO2 anodic films.
Alexander S. Bondarenko +1 more
openaire +1 more source
Study on passivation and erosion-enhanced corrosion resistance by Mott-Schottky analysis
Electrochimica Acta, 2006Abstract The erosion-enhanced corrosion of carbon steel A1045 was investigated by electrochemical methods in three borate buffer solutions with different concentrations, and the resistance of material to erosion-enhanced corrosion was discussed from the passive film growth kinetics. In polarization tests, the carbon steel exhibited comparable passive
H.X. Guo, B.T. Lu, J.L. Luo
openaire +1 more source
Mott–Schottky analysis of polycrystalline copper(I) bromide in aqueous electrolytes
Journal of Electroanalytical Chemistry, 1998Abstract Polycrystalline electrodes of copper(I) bromide were investigated at room temperature in aqueous electrolytes. After long-time stabilisation in a 0.001 M CuSO 4 solution, an open-circuit potential of about 0.27 V (SHE) was observed. Nonideal interfacial capacitance values were determined from impedance measurements at frequencies between ...
P Knauth, Y Massiani
openaire +1 more source

