Results 251 to 260 of about 59,134 (299)

Activating palladium nanoparticles via a Mott-Schottky heterojunction in electrocatalytic hydrodechlorination reaction

Journal of Hazardous Materials, 2020
This work exploited one novel power of the Mott-Schottky heterojunction interface in activating the palladium (Pd) in electrocatalytic hydrodechlorination reaction (EHDC, one reaction targeted for the abatement of chlorinated organic pollutants from water).
Song Shu, Junxi Li, Xiaoshu Lv
exaly   +3 more sources

Selection of measurement frequency in Mott–Schottky analysis of passive layer on nickel

Electrochimica Acta, 2006
Abstract The measurements of charge space capacity versus potential have been carried out on passive nickel electrode. The Mott–Schottky relationship was obtained for different measurement frequencies. The shape of this characteristic depends on selection of the measurement frequency.
K Darowicki, Stefan Krakowiak, P Slepski   +2 more
exaly   +2 more sources

Design of the Synergistic Rectifying Interfaces in Mott–Schottky Catalysts

Chemical Reviews, 2022
The functions of interfacial synergy in heterojunction catalysts are diverse and powerful, providing a route to solve many difficulties in energy conversion and organic synthesis. Among heterojunction-based catalysts, the Mott-Schottky catalysts composed of a metal-semiconductor heterojunction with predictable and designable interfacial synergy are ...
Dong Xu, Shi-Nan Zhang, Jie-Sheng Chen, Xin-Hao Li   +3 more
openaire   +2 more sources

Nitrogen-doped carbon wrapped Co-Mo2C dual Mott–Schottky nanosheets with large porosity for efficient water electrolysis

Applied Catalysis B: Environmental, 2021
Efficient, inexpensive and stable electrocatalysts are challenging and desperately required in order to complement the water electrolysis of noble metal catalysts.
Yaoda Liu, Tingting Liang, Edison Huixiang Ang   +2 more
exaly   +2 more sources

THE FREQUENCY DEPENDENCE OF MOTT–SCHOTTKY PLOTS

Chemistry Letters, 1985
Abstract The charging current of the space charge layer of a CdS(0001)/aq. KCl junction was measured by Time Domain Spectroscopy in the short time region. The relaxation spectrum consists of a multitude of exponentials, which is interpreted by a heterogeneous semiconductor surface.
Christian M Braun, Akira Fujishima, Kenichi Honda   +2 more
openaire   +1 more source

Mott–Schottky analysis of thin ZnO films

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2000
Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H2 gas at 400 °C or by cathodic electrochemical ...
Charles F. Windisch, Gregory J. Exarhos
openaire   +1 more source

Analysis of Electrodes Displaying Frequency Dispersion in Mott-Schottky Tests

Journal of The Electrochemical Society, 2008
A procedure is proposed for using the Mott-Schottky approximation to obtain the electronic properties (flatband potential and charge carrier density) of passive films that are modeled by equivalent circuits that contain a constant phase element (CPE) rather than a capacitor. Capacitances are calculated from the equivalent circuit containing a CPE using
Scott P. Harrington, Thomas M. Devine
openaire   +1 more source

Flat-Band Potential of a Semiconductor: Using the Mott–Schottky Equation

Journal of Chemical Education, 2007
Semiconductors are an important category of materials involved in many applications in modern society. One such application revolves around the search for efficient sustainable forms of energy, in this case the use of semiconductors to assist in the conversion of light to electrical energy.
K. Gelderman, L. Lee, S. W. Donne
openaire   +1 more source

Surface treatment of Si by annealing and effect on Mott-Schottky plots

Electrochimica Acta, 1992
Abstract Annealing has a healing effect on the surface of p-Si. This leads to a shift of the flatband potential of up to 2V. This effect was studied by capacitance measurements (Mott—Schottky plots) on p-Si samples in acetonitrile in a wide range of acceptor concentrations from NA = 1 E+21 up to NA = 1 E+25.
C. Zeyer, H.R. Grüniger
openaire   +1 more source