Results 181 to 190 of about 2,050,912 (292)

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

open access: yesAdvanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao   +15 more
wiley   +1 more source

Postoperative C5 Palsy Following Posterior Cervical Decompression and Fusion: A Case Report. [PDF]

open access: yesJ Orthop Case Rep
Prasad M   +5 more
europepmc   +1 more source

Novel Optical Functionalities in Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
We present a tunnel junction memristor with expanded optical functionalities enabled by the integration of an ultra‐thin CdS barrier and a top ITO electrode. UV illumination triggers a photovoltaic response that can sense the memristor state. At very low temperatures, the UV light generates a high injection of photocarriers and produces a volatile ...
Isabel Tenreiro   +6 more
wiley   +1 more source

Non‐Destructive, Reference‐Free Quantitative Analysis of TaOx Memristive Devices Using Soft X‐Ray Radiation

open access: yesAdvanced Electronic Materials, EarlyView.
A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch   +9 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada   +11 more
wiley   +1 more source

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