Results 191 to 200 of about 2,050,912 (292)

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

Postoperative outcomes of multilevel versus single-level anterior cervical discectomy and fusion in patients with sarcopenia: a matched cohort study. [PDF]

J Spine Surg
Mabanag RF, Maddina N, Rteil A, Amirouche F.   +3 more
europepmc   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Advancing multilevel Bayesian networks with efficient Bayesian inference. [PDF]

Stat Methods Med Res
Yirdaw BE, Debusho LK, van Niekerk J, Rue H.   +3 more
europepmc   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Multilevel Lateral Lumbar Interbody Fusion for Symptomatic Spondylotic Stenosis and Severe Disc Degeneration Without Scoliosis: Single-Institutional Case Series and Lessons Learned. [PDF]

Int J Spine Surg
Chatad D, DeLomba WC, Taman M, Leary OP, Syed S, Liu DD, Pertsch NJ, Cámara-Quintana JQ, Niu T, Gokaslan ZL, Telfeian AE, Oyelese AA, Fridley JS.   +12 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Integration of Redox‐Active Polyoxovanadate Clusters into PMMA: Structure, Nanoscale Organization and Multilevel Redox Switching

Advanced Electronic Materials, EarlyView.
Solvent‐processable polyoxovanadate–PMMA nanocomposites exhibit concentration‐dependent 2D and 3D organization on gold surfaces, while retaining multilevel redox switching at room temperature. These hybrids bridge nanoscale functionality and macroscopic measurement, establishing a versatile platform for hybrid molecular–polymer memory materials ...
Jonas Lorenz, Marco Moors, Tom Scherzer, Olesya Daikos, Jens Bauer, Andrea Prager, Jan Griebel, Yeji Lee, Vineeth Kumar Bandari, Thomas Blaudeck, Oliver G. Schmidt, Kirill Monakhov   +11 more
wiley   +1 more source

Case Report: Single-access epidural adhesiolysis and catheter-delivered pulsed radiofrequency for refractory failed back surgery syndrome. [PDF]

Front Pain Res (Lausanne)
Nascimento R.
europepmc   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source