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Current Advances in Nanoelectronics, Nanosensors, and Devices [PDF]

open access: yesNanomaterials
This Special Issue on “Current Advances in Nanoelectronics, Nanosensors, and Devices” collects cutting-edge research and comprehensive reviews in the rapidly evolving field of nanotechnology.
Filippo Giubileo
doaj   +2 more sources

Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate

open access: yesNanoscale Research Letters, 2022
The material quality of III-nitrides is severely limited by the lack of cost-effective substrates with suitable lattice and thermal expansion coefficients.
Kejia Wang   +4 more
doaj   +1 more source

Nanoelectronics and nanotechnology: promising approaches in the educational process

open access: yesРоссийский технологический журнал, 2022
Objectives. Nanoelectronics is concerned with the development of physical and technological foundations for the creation of integrated circuits comprised of elements whose topological dimensions do not exceed 100 nm.
A. S. Sigov   +2 more
doaj   +1 more source

Electric Energy Storage Effect in Hydrated ZrO2-Nanostructured System

open access: yesNanomaterials, 2022
The dimensional effect of electric charge storage with a density of up to 270 μF/g by the hydrated ZrO2-nanoparticles system was determined. It was found that the place of localization of different charge carriers is the generalized heterophase boundary ...
Alexander S. Doroshkevich   +20 more
doaj   +1 more source

Quasiepitaxial Aluminum Film Nanostructure Optimization for Superconducting Quantum Electronic Devices

open access: yesNanomaterials, 2023
In this paper, we develop fabrication technology and study aluminum films intended for superconducting quantum nanoelectronics using AFM, SEM, XRD, HRXRR.
Mikhail Tarasov   +7 more
doaj   +1 more source

Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

open access: yesElectronics Letters, 2023
The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each having an aperture
Nor Ammouri   +7 more
doaj   +1 more source

500 microkelvin nanoelectronics

open access: yesNature Communications, 2020
Pushing the low temperature limit of refrigerators beyond milli-kelvin regime holds the promise for new discoveries in the nano-electronic devices. Here, Sarsby et al.
Matthew Sarsby   +2 more
doaj   +1 more source

Methodology for Automated Design of Quantum-Dot Cellular Automata Circuits

open access: yesIEEE Open Journal of Nanotechnology, 2023
Quantum-dot Cellular Automata (QCA) provide very high scale integration potential, very high switching frequency, and have extremely low power demands, which make the QCA technology quite attractive for the design and implementation of large-scale, high ...
Orestis Liolis   +4 more
doaj   +1 more source

A Solution of the Two-Capacitor Problem Through its Similarity to Single-Electron Electronics

open access: yesIEEE Open Journal of Circuits and Systems, 2020
The purpose of this paper is to investigate the two-capacitor paradox using circuit models developed in the analysis of circuits that include nanoelectronic single-electron tunneling devices.
Jaap Hoekstra
doaj   +1 more source

Ferritin-Based Single-Electron Devices

open access: yesBiomolecules, 2022
We report on the fabrication of single-electron devices based on horse-spleen ferritin particles. At low temperatures the current vs. voltage characteristics are stable, enabling the acquisition of reproducible data that establishes the Coulomb blockade ...
Jacqueline A. Labra-Muñoz   +4 more
doaj   +1 more source

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