Results 41 to 50 of about 6,872 (179)

Flexible memristor-based LUC and its network integration for Boolean logic implementation

open access: yesIET Nanodielectrics, 2019
Memristor is a nanoscale electronic element with variable resistance that depends on the amount and direction of the charge passing through it. As a promising candidate, this memristive element opens up a new approach for the implementation of Boolean ...
Zhekang Dong   +4 more
doaj   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

open access: yesAdvanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga   +3 more
wiley   +1 more source

Cryptographic models of nanocommunicaton network using quantum dot cellular automata: A survey

open access: yesIET Quantum Communication, 2021
Security of information is an important issue during the transmission of information. The device that performs the encoding and decoding process is called the encoder and decoder, respectively.
Bikash Debnath   +2 more
doaj   +1 more source

High‐Power Terahertz Emission from Picosecond Nano‐Plasma Switching Driven by Secondary Electron Emission Avalanche

open access: yesAdvanced Science, EarlyView.
A nano‐plasma device enables watt‐level on‐chip THz generation through picosecond switching triggered by secondary electron emission avalanche. An ultra‐dense electron sheet initiates nano‐plasma formation within a ∼100 nm gap, driving rapid energy release into an integrated resonator.
Guangyu Sun   +4 more
wiley   +1 more source

Multilayer MoS2 Schottky Barrier Field Effect Transistor

open access: yesIEEE Open Journal of Nanotechnology
The miniaturization of electronic components remains a critical focus in electronics, particularly in transistor design, with research exploring new solutions such as the use of two-dimensional materials in Schottky Barrier Field Effect Transistors (SB ...
Sebastiano De Stefano   +7 more
doaj   +1 more source

Organoid Brain‐Machine‐Interface Devices for Central Nervous System Repair

open access: yesAdvanced Science, EarlyView.
We envision organoid brain‐machine‐interface (Organoid‐BMI) devices as new biohybrid bidirectional communication pathways to connect the human CNS and the external world for personalized CNS repair and regeneration. ABSTRACT Central nervous system (CNS) repair and regeneration suffer from tremendous clinical challenges due to current limitations in ...
Yantao Xing   +10 more
wiley   +1 more source

Universal-Gate-Driven Efficient 3-D Vedic Multiplier Designs for Nanoscale Logic Systems With Application of High-Performance Computing

open access: yesIEEE Access
Perpendicular Nanomagnetic Logic (pNML) offers a promising post-CMOS paradigm that combines nonvolatility, near-zero static power consumption, and high radiation tolerance.
Naga Raju Bathula, Neeraj Kumar Misra
doaj   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

open access: yesAdvanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen   +8 more
wiley   +1 more source

Laser-Induced Reconfiguration of Magnetic Domain Structure in Iron Garnet Films with Strong In-Plane Anisotropy

open access: yesNanomaterials
In this work we demonstrate the laser-driven reconfiguration of stripe domains in a thick bismuth-substituted iron garnet film with the (210) crystallographic orientation exhibiting strong in-plane anisotropy.
Mikhail A. Stepanov   +4 more
doaj   +1 more source

Design and Analysis the Performance of Ternary Logic Gates using Doping-Less FET [PDF]

open access: yesITM Web of Conferences
This paper presents the analysis of performance and design of ternary logic gates using doping- less field-effect transistors (DLFET) integrated with resistive memory (RM).
Prabu Arulraj Simon   +2 more
doaj   +1 more source

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