Results 61 to 70 of about 6,872 (179)

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Ultra‐Thin and Highly Insulating Aromatic Monolayers by N‐Heterocyclic Carbenes

Angewandte Chemie, EarlyView.
By using N‐heterocyclic carbenes extremally insulating and at the same time as thin as 0.3 nm molecular films are formed. The charge transport calculations indicate absence of destructive quantum interference effect which was so far the only way to suppress conductivity in aromatic molecules.
Mateusz Wróbel, Raka Ahmed, William Bro‐Jørgensen, Krzysztof Kozieł, Christian A. Nijhuis, Gemma C. Solomon, Piotr Cyganik   +6 more
wiley   +2 more sources

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Successes and Issues in the Growth of Mo_ad and MoSe₂ on Ag(111) by the E-ALD Method

Metals, 2019
This paper explores the conditions for the electrodeposition of Moad (molybdenum adlayer) on Ag(111) from alkaline aqueous solution. Moreover, the first stages of the growth of MoSe2 are also presented, performing the deposition of Sead on the deposited ...
Martina Vizza, Andrea Giaccherini, Walter Giurlani, Maurizio Passaponti, Nicola Cioffi, Rosaria Anna Picca, Antonio De Luca, Lorenzo Fabbri, Alessandro Lavacchi, Filippo Gambinossi, Emanuele Piciollo, Emanuele Salvietti, Massimo Innocenti   +12 more
doaj   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography

Nanomaterials, 2017
The prolonged and aggressive nature of scaling to augment the performance of silicon integrated circuits (ICs) and the technical challenges and costs associated with this has led to the study of alternative materials that can use processing schemes ...
Cian Cummins, Alan P. Bell, Michael A. Morris   +2 more
doaj   +1 more source

Chronic Disease Monitoring Using Advanced Compliant Materials for Bioelectronics

Advanced Electronic Materials, EarlyView.
Compliant bioelectronic systems enable continuous monitoring of chronic disease through soft, stretchable materials and tissue‐conformal designs that support stable electrophysiological, mechanical, and biochemical sensing. Integration of diverse sensing modalities with thoughtful material selection, device architectures, and advanced fabrication ...
Han Kim, Mabel Bartlett, Liyang Wang, Karl Bates, Mengdi He, Myungbo Kim, Carmel Majidi, Tzahi Cohen‐Karni   +7 more
wiley   +1 more source

Application-driven innovations in nanodevices for next-generation transistors, neuromorphic computing, neural interface and quantum computing

Frontiers in Nanotechnology
The demand for aggressive scaling in integrated circuits technology has been a primary driving force behind the rapid advancement of nanotechnology, leading to groundbreaking innovations in nanoscience, engineering, and technology.
Youfan Hu
doaj   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

AI‐Guided Co‐Optimization of Advanced Field‐Effect Transistors: Bridging Material, Device, and Fabrication Design

Advanced Intelligent Discovery, EarlyView.
This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath, Shauryaraj K. Jilkar, Aditya Udgaonkar, Yu (Joe) Lu, Ali Mesbah   +4 more
wiley   +1 more source