Results 51 to 60 of about 6,872 (179)

Giant Bulk Photovoltaic Effect in Two‐Dimensional Topological Ferroelectric Semimetal

Advanced Science, EarlyView.
ABSTRACT Ferroelectric (FE) metals have attracted growing interest because they combine ferroelectricity with metallic behavior and enable polarization‐controlled band topology near the Fermi level. However, the number of known ferroelectric metals is still limited.
Jianhua Wang, Xia Cheng, Shibo Fang, Tao Zhu, Xiaodong Zhou, Shifeng Qian, Tie Yang, Wenhong Wang, Yee Sin Ang   +8 more
wiley   +1 more source

Oxygen‐Assisted MOCVD Growth of Monolayer PtSe2 Films With Bandgap Opening for Semiconducting FET Channels

Advanced Science, EarlyView.
Monolayer PtSe2 films are successfully grown via optimized MOCVD, achieving uniform coverage over a 1.5 cm × 1.5 cm area. Oxygen‐assisted growth effectively removes carbon impurities, ensuring high film quality. Array‐level FETs based on monolayer PtSe2 channels demonstrate low off‐current and high ION/IOFF ratios, highlighting the potential of PtSe2 ...
Yuseok Kim, Hee‐Soo So, Minseok Yoo, Saeyoung Oh, Dongyoung Kim, Minseung Gyeon, Min‐Kyung Jo, Gichang Noh, Tae Soo Kim, Min‐gyu Kim, Jeongwon Park, Hyun‐Jun Chai, Minsoo Kang, Suhyun Kim, Ayoung Ham, Jaehyun Lee, Jongsun Lim, Seungwoo Song, Joon Young Kwak, Seunghwan Seo, Chang‐Soo Lee, Chang Gyoun Kim, Kibum Kang   +22 more
wiley   +1 more source

Reversible mechano-electrochemical writing of metallic nanostructures with the tip of an atomic force microscope

Beilstein Journal of Nanotechnology, 2012
We recently introduced a method that allows the controlled deposition of nanoscale metallic patterns at defined locations using the tip of an atomic force microscope (AFM) as a “mechano-electrochemical pen”, locally activating a passivated substrate ...
Christian Obermair, Marina Kress, Andreas Wagner, Thomas Schimmel   +3 more
doaj   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

DEVELOPMENT OF A LOGICAL ELEMENT BASED ON POLYPHENYLENE MOLECULES

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2020
The high energy consumption of integrated electronics products and expensive methods of their production makes scaling silicon semiconductor devices to sizes less than 50 nm a difficult technological and design task.
G.A. Mustafaev, A.G. Mustafaev, V.A. Panchenko, N.V. Cherkesova   +3 more
doaj   +1 more source

Nonlinear Transverse Transport in a Ferromagnetic Polar Metal

Advanced Electronic Materials, EarlyView.
This work reports the observation of a nonlinear transverse response in ferromagnetic polar SrRuO3(111) thin films. The nonlinear signal exhibits a sharp enhancement across the magnetic phase transition. Through detailed scaling and theoretical analysis, the authors attribute this behavior to a sign reversal of the Berry curvature triple, establishing ...
Xuyang Sha, Xuejin Zhang, Hao Liu, Jin Cao, Ruohan Chen, Jinfeng Zhai, Dingfu Shao, Shiwei Wu, Zhen Wang, Cong Xiao, Shengyuan A. Yang, Pan He, Hangwen Guo, Jian Shen   +13 more
wiley   +1 more source

Coiled supracrystalline nanotubes as solenoids for nanoelectronics

Физика волновых процессов и радиотехнические системы, 2015
The methods of conductive supracrystalline nanotubes spiralization are shown. Such coiled nanotubes can be used as the solenoids in nanoelectronic components of radio-technical systems.
R.A. Brazhe, A.F. Savin
doaj  

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Non‐Destructive, Reference‐Free Quantitative Analysis of TaOx Memristive Devices Using Soft X‐Ray Radiation

Advanced Electronic Materials, EarlyView.
A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch, Xin Zheng, Andreas Haidl, Jan Weser, Christian Stadelhoff, Marc Dummin, Leona J. Bauer, Rainer Unterumsberger, Ilia Valov, Burkhard Beckhoff   +9 more
wiley   +1 more source

Graphene nanoribbon FET technology‐based OTA for optimizing fast and energy‐efficient electronics for IoT application: Next‐generation circuit design

Micro & Nano Letters
The Internet of Things (IoT) and portable electronic devices are pivotal in enhancing living standards, with battery efficiency and compact design being critical for these devices.
Faraz Hashmi, M Nizamuddin, Mohammad Aleem Farshori, Syed Umar Amin, Zafar Iqbal Khan   +4 more
doaj   +1 more source