Results 21 to 30 of about 7,179 (208)

Synchronous Counter Design Using Novel Level Sensitive T-FF in QCA Technology

open access: yesJournal of Low Power Electronics and Applications, 2019
The quantum-dot cellular automata (QCA) nano-technique has attracted computer scientists due to its noticeable features such as low power consumption and small size.
Ali H. Majeed   +3 more
doaj   +1 more source

Wavelength‐stabilized ns‐pulsed 2.2 kW diode laser bar with multiple active regions and tunnel junctions

open access: yesElectronics Letters, 2023
The improvement of the performance of a distributed Bragg reflector laser bar emitting near 905 nm through the use of multiple epitaxially stacked active regions and tunnel junctions is reported. The bar consisting of 48 emitters (each having an aperture
Nor Ammouri   +7 more
doaj   +1 more source

Methodology for Automated Design of Quantum-Dot Cellular Automata Circuits

open access: yesIEEE Open Journal of Nanotechnology, 2023
Quantum-dot Cellular Automata (QCA) provide very high scale integration potential, very high switching frequency, and have extremely low power demands, which make the QCA technology quite attractive for the design and implementation of large-scale, high ...
Orestis Liolis   +4 more
doaj   +1 more source

Flexible memristor-based LUC and its network integration for Boolean logic implementation

open access: yesIET Nanodielectrics, 2019
Memristor is a nanoscale electronic element with variable resistance that depends on the amount and direction of the charge passing through it. As a promising candidate, this memristive element opens up a new approach for the implementation of Boolean ...
Zhekang Dong   +4 more
doaj   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

open access: yesAdvanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad   +3 more
wiley   +1 more source

A Solution of the Two-Capacitor Problem Through its Similarity to Single-Electron Electronics

open access: yesIEEE Open Journal of Circuits and Systems, 2020
The purpose of this paper is to investigate the two-capacitor paradox using circuit models developed in the analysis of circuits that include nanoelectronic single-electron tunneling devices.
Jaap Hoekstra
doaj   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

open access: yesAdvanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar   +9 more
wiley   +1 more source

A bioinspired microdevice unifying energy storage and actuation through hydration control

open access: yesNature Communications
Biological systems seamlessly integrate energy storage and actuation within compact architectures, whereas synthetic approaches largely implement these functions as separate components.
Wenlan Zhang   +15 more
doaj   +1 more source

Design and Analysis the Performance of Ternary Logic Gates using Doping-Less FET [PDF]

open access: yesITM Web of Conferences
This paper presents the analysis of performance and design of ternary logic gates using doping- less field-effect transistors (DLFET) integrated with resistive memory (RM).
Prabu Arulraj Simon   +2 more
doaj   +1 more source

Nanoelectronics: challenges and opportunities [PDF]

open access: yes2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), 2006
The scaling of CMOS technology is coming soon to an end, and yet it is unclear whether CMOS devices in the 10-20 nanometer range will find a useful place in semiconductor products. At the same time, new silicon-based technologies (e.g., silicon nanowires) and non-silicon based (e.g., carbon nanotubes) show the promise of replacing traditional ...
openaire   +3 more sources

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