Results 11 to 20 of about 5,324 (209)

New nanoscale artificial pinning centres for NbTi superconductors [PDF]

Materials & Design, 2021
The efficiency of new artificial pinning centres have been investigated in NbTi using the oxide dispersion strengthening (ODS) concept more typically applied to steels and Ni-superalloys. NbTi alloys containing a dispersion of nanoscale Y2Ti2O7 particles
Tayebeh Mousavi, Patrick S. Grant, Susannah C. Speller, Chris Grovenor   +3 more
doaj   +2 more sources

Penelope: The NBTI-Aware Processor [PDF]

40th Annual IEEE/ACM International Symposium on Microarchitecture (MICRO 2007), 2007
Transistors consist of lower number of atoms with every technology generation. Such atoms may be displaced due to the stress caused by high temperature, frequency and current, leading to failures. NBTI (negative bias temperature instability) is one of the most important sources of failure affecting transistors.
Abella Ferrer, Jaume, Vera Rivera, Francisco Javier, González Colás, Antonio María   +2 more
openaire   +5 more sources

Development of a Nb‐Based Semiconductor‐Superconductor Hybrid 2DEG Platform

Advanced Electronic Materials
Semiconductor‐superconductor hybrid materials are used as a platform to realize Andreev bound states, which hold great promise for quantum applications.
Sjoerd Telkamp, Tommaso Antonelli, Clemens Todt, Manuel Hinderling, Marco Coraiola, Daniel Haxell, Sofieke C. ten Kate, Deividas Sabonis, Peng Zeng, Rüdiger Schott, Erik Cheah, Christian Reichl, Fabrizio Nichele, Filip Krizek, Werner Wegscheider   +14 more
doaj   +2 more sources

Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs

IEEE Access, 2021
The degradation mechanisms for pMOSFETs from a 130 nm partially-depleted silicon on insulator (PDSOI) technology under the combined effects of total ionizing dose (TID) and negative bias temperature instability (NBTI) are investigated.
Chao Peng, Rui Gao, Zhifeng Lei, Zhangang Zhang, Yiqiang Chen, Yun-Fei En, Yun Huang   +6 more
doaj   +1 more source

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al₂O₃/GeO_x Gate Stacks

IEEE Journal of the Electron Devices Society, 2023
The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that the permanent and recoverable defects are generated simultaneously during the
Yu Sun, Walter Schwarzenbach, Sicong Yuan, Zhuo Chen, Yanbin Yang, Bich-Yen Nguyen, Dawei Gao, Rui Zhang   +7 more
doaj   +1 more source

Study on the Dissolution and Precipitation Behavior of Self-Designed (NbTi)C Nanoparticles Addition in 1045 Steel

Metals, 2021
Self-designed (NbTi)C nanoparticles were obtained by mechanical alloying, predispersed in Fe powder, and then added to 1045 steel to obtain modified cast steels.
Hongwei Zhu, Haonan Li, Furen Xiao, Zhixiang Gao   +3 more
doaj   +1 more source

High-Temperature Oxidation of NbTi-Bearing Refractory Medium- and High-Entropy Alloys. [PDF]

Materials (Basel)
The oxidation of six NbTi-i refractory medium- and high-entropy alloys (NbTi + Ta, NbTi + CrTa, NbTi + AlTa, NbTi + AlMo, NbTi + AlMoTa and NbTi + AlCrMo) were investigated at 1000 °C for 20 h.
Lin WC, Lien YW, Moreau LE, Murakami H, Lo KC, Gorsse S, Yeh AC.   +6 more
europepmc   +3 more sources

Investigation of the Correlation between Initial Microstructure and Critical Current Density of Nb-46.5 wt%Ti Superconducting Material

Metals, 2021
We have investigated the effect of initial microstructures on the change in critical current density (Jc) of Nb-46.5 wt%Ti (NbTi) superconducting material.
In Yong Moon, Se-Jong Kim, Ho Won Lee, Jaimyun Jung, Young-Seok Oh, Seong-Hoon Kang   +5 more
doaj   +1 more source

Self-checking monitor for NBTI due degradation [PDF]

, 2010
Performance degradation of integrated circuits due to aging effects, such as Negative Bias Temperature Instability (NBTI), is becoming of great concern for current and future CMOS technology.
C. Metra, Metra, Cecilia, Omana, Martin, N. Bosio, Rossi D., Bosio N., Bosio, Nicolo', Omana M., Metra C., M. Omana, D. Rossi, OMANA, MARTIN EUGENIO, Rossi, Daniele   +12 more
core   +1 more source

Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET

IEEE Access, 2020
The negative bias temperature instability (NBTI) mechanisms for Core and input/output (I/O) devices from a 130 nm partially-depleted silicon on insulator (PDSOI) technology are investigated.
Chao Peng, Zhifeng Lei, Rui Gao, Zhangang Zhang, Yiqiang Chen, Yunfei En, Yun Huang   +6 more
doaj   +1 more source