Results 1 to 10 of about 8,394,012 (247)

Modeling of negative bias temperature instability

Journal of Telecommunications and Information Technology, 2023
Negative bias temperature instability is regarded as one of the most important reliability concerns of highly scaled PMOS transistors. As a consequence of the continuous downscaling of semiconductor devices this issue has become even more important over
Tibor Grasser, Siegfried Selberherr
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Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Micromachines, 2022
The Negative Bias Temperature Instability (NBTI) effect of partially depleted silicon-on-insulator (PDSOI) PMOSFET based on 130 nm is investigated. First, the effect of NBTI on the IV characteristics and parameter degradation of T-Gate PDSOI PMOSFET was ...
Yafang Yang, Hongxia Liu, Kun Yang, Zihou Gao, Zixu Liu   +4 more
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Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs

IEEE Access, 2021
The degradation mechanisms for pMOSFETs from a 130 nm partially-depleted silicon on insulator (PDSOI) technology under the combined effects of total ionizing dose (TID) and negative bias temperature instability (NBTI) are investigated.
Chao Peng, Rui Gao, Zhifeng Lei, Zhangang Zhang, Yiqiang Chen, Yun-Fei En, Yun Huang   +6 more
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Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET

IEEE Access, 2020
The negative bias temperature instability (NBTI) mechanisms for Core and input/output (I/O) devices from a 130 nm partially-depleted silicon on insulator (PDSOI) technology are investigated.
Chao Peng, Zhifeng Lei, Rui Gao, Zhangang Zhang, Yiqiang Chen, Yunfei En, Yun Huang   +6 more
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Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization

IEEE Journal of the Electron Devices Society, 2021
In this article, we present an experimental study on the impact of post-metallization annealing conditions on the negative-bias temperature instability (NBTI) of Si p-channel fin field-effect transistors (p-FinFETs) with atomic layer deposition tungsten (
Longda Zhou, Qianqian Liu, Hong Yang, Zhigang Ji, Hao Xu, Guilei Wang, Eddy Simoen, Haojie Jiang, Ying Luo, Zhenzhen Kong, Guobin Bai, Jun Luo, Huaxiang Yin, Chao Zhao, Wenwu Wang   +14 more
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Evaluation on Temperature-Dependent Transient V_T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Micromachines, 2022
In this work, temperature-dependent transient threshold voltage (VT) instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a fast voltage ...
Rui Wang, Hui Guo, Qianyu Hou, Jianming Lei, Jin Wang, Junjun Xue, Bin Liu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng   +10 more
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Threshold Voltage Degradation for n-Channel 4H-SiC Power MOSFETs

Journal of Low Power Electronics and Applications, 2020
In this study, threshold voltage instability on commercial silicon carbide (SiC) power metal oxide semiconductor field electric transistor MOSFETs was evaluated using devices manufactured from two different manufacturers.
Esteban Guevara, Victor Herrera-Pérez, Cristian Rocha, Katherine Guerrero   +3 more
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Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing

IEEE Journal of the Electron Devices Society, 2023
In this paper, we report the effect of post-gate metallization annealing on the performance of GaN-based High Electron Mobility Transistors (HEMTs). The performances of HEMTs annealed at 200 °C (HEMT1) and at 400 °C (HEMT2) for 5 minutes in
Sujan Sarkar, Ramdas P. Khade, Ajay Shanbhag, Nandita DasGupta, Amitava DasGupta   +4 more
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Countermeasures against NBTI degradation on 6T-SRAM cells [PDF]

Advances in Radio Science, 2011
In current process technologies, NBTI (negative bias temperature instability) has the most severe aging effect on static random access memory (SRAM) cells. This degradation effect causes loss of stability.
E. Glocker, D. Schmitt-Landsiedel, S. Drapatz   +2 more
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Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al₂O₃/GeO_x Gate Stacks

IEEE Journal of the Electron Devices Society, 2023
The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that the permanent and recoverable defects are generated simultaneously during the
Yu Sun, Walter Schwarzenbach, Sicong Yuan, Zhuo Chen, Yanbin Yang, Bich-Yen Nguyen, Dawei Gao, Rui Zhang   +7 more
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