Results 31 to 40 of about 23,788 (263)

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source

Physics‐Grounded Materials Artificial Intelligence for Reliable Materials Discovery

Advanced Functional Materials, EarlyView.
Physics‐Grounded Materials AI (PhysMat AI) integrates physical priors, descriptors, constraints, verification, and data infrastructure into a unified full‐stack framework, enabling reliable, interpretable, and autonomous AI‐driven materials discovery.
Yuhang Wang, Qian Wang, Seong‐Hoon Jang, Hao Li   +3 more
wiley   +1 more source

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

IET Power Electronics
Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very‐high temperature range (150°C ...
Cong Chen, Yumeng Cai, Peng Sun, Zhibin Zhao   +3 more
doaj   +1 more source

Nitride MXenes Beyond Carbides: Bridging the Gap Between Computational Prediction and Experimental Realization

Advanced Functional Materials, EarlyView.
Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley   +1 more source

Investigation of Prolonged Negative Threshold Voltage Shift Induced by Low Drain Bias in Schottky p-GaN Gate HEMTs

IEEE Journal of the Electron Devices Society
In this work, threshold voltage (V ${}_{\mathrm {th}}$ ) instability was investigated under drain bias stress in Schottky p-GaN gate high electron mobility transistors (HEMTs).
Myeongsu Chae, Hyungtak Kim
doaj   +1 more source

Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO₂ Thin-Film Transistors and Applications to Circuits

Membranes, 2021
Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance.
Christophe Avis, Jin Jang
doaj   +1 more source

On the thermal activation of negative bias temperature instability

2009 IEEE International Integrated Reliability Workshop Final Report, 2009
The temperature dependence of negative bias temperature instability (NBTI) is investigated on 2.0nm SiO 2 devices from temperatures ranging from 300K down to 6K with a measurement window of ∼12ms to 100s. Results indicate that classic NBTI degradation is observed down to ∼200K and rarely observed at temperatures below 140K in the experimental window ...
Southwick, Richard G., III, Knowlton, William B., Kaczer, Ben, Grasser, Tibor   +3 more
openaire   +2 more sources

Engineering a Fluorinated AlPO4 Interface: Toward High Initial Coulombic Efficiency and Stable Oxygen Redox in Li‐Rich Layered Oxide Cathodes

Advanced Functional Materials, EarlyView.
We report a chemically incorporated fluorinated AlPO4 (AlPO4‐F) architecture that functions as a multifunctional “interfacial fortress” for Li‐rich layered oxides (LLOs). By modulating the surface potential to –32.16 mV, this architecture enriches Li+ concentration and repels detrimental electrolyte anions.
Hojun Moon, Harim Jeong, Younghwon Kim, Buseong Kim, Geunhyeong Kim, Suyeon Lee, Jeongjin Lee, Joonwoo Kim, Jemin Lee, Youngsoo Kim, Young‐Il Kim, Dae Won Cho, Jeeyoung Yoo, Misook Kang   +13 more
wiley   +1 more source

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source

Enhancement-mode tri-gate GaN MIS-HEMTs with PEALD-AlN/HfO2 dual-gate dielectric [PDF]

APL Electronic Devices
In this study, we demonstrate a PEALD-AlN/HfO2 dual-gate dielectric normally-off GaN high-electron-mobility transistor (HEMT) with a recess-tri-gate architecture.
Rahul Rai, Viet Quoc Ho, Khanh Quoc Nguyen, Hao Chung Kuo, Edward Yi Chang   +4 more
doaj   +1 more source