Results 31 to 40 of about 8,394,012 (247)

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Negative bias temperature instability (NBTI) experiment [PDF]

, 2006
The phenomenon known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed
Schuster, Christopher Mark.
core   +2 more sources

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

Beilstein Journal of Nanotechnology, 2019
This study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs).
Dapeng Wang, Mamoru Furuta
doaj   +1 more source

Anti-Interference Low-Power Double-Edge Triggered Flip-Flop Based on C-Elements

Tsinghua Science and Technology, 2022
When the input signal has been interfered and glitches occur, the power consumption of Double-Edge Triggered Flip-Flops (DETFFs) will significantly increase.
Zhengfeng Huang, Xiao Yang, Tai Song, Haochen Qi, Yiming Ouyang, Tianming Ni, Qi Xu   +6 more
doaj   +1 more source

A novel negative bias temperature instability model for nanoscale finfet

, 2009
This paper presents both static and dynamic NBTI Negative Bias Temperature Instability model based on the novel Reaction-Trapping theory. The accuracy of the proposed is greatly improved comparing to the classical Reaction-Diffusion theory, and the ...
Ma, Chenyue, Li, Bo, He, Frank, Zhang, Xing, Bo Li, Xing Zhang, Frank He, Chenyue Ma, Xinnan Lin, Lin, Xinnan   +9 more
core   +1 more source

Ultrafast Thermal Shock Synthesis of CuNiSnLa Medium‐Entropy Metallic Glass for Sustainable Nitrogen Fixation via Plasma‐Coupled Electrocatalysis

Advanced Functional Materials, EarlyView.
This work introduces an ultrafast thermal shock strategy to synthesize a CuNiSnLa medium‐entropy metallic glass (MEMG). The rapid heating and cooling process generates a robust, highly active catalyst for electrocatalytic nitrate reduction to ammonia (NRA).
Hongbo Chen, Peng‐Jun Deng, Yang Liu, Shenglong Huang, Shuo Sun, Haoxuan Li, Jiajia Lu, Panagiotis Tsiakaras   +7 more
wiley   +1 more source

Modeling of negative bias temperature instability [PDF]

, 2007
Negative bias temperature instability is regarded as one of the most important reliability concerns of highly scaled PMOS transistors. As a consequence of the continuous downscaling of semiconductor devices this issue has become even more important over ...
Grasser, T., Selberherr, S.
core  

Design and Characterization of a Two‐Dimensional Soft Array Based on Cooperative Dielectric Elastomer Actuators

Advanced Functional Materials, EarlyView.
A fully polymeric two‐dimensional array of Dielectric Elastomers enables self‐sensing, cooperative actuation, and large‐stroke operation in a DE‐based autonomous conveyor. Based only on voltage and current measurements at actuator level, the system detects the presence of a ball and subsequently drives it toward a target position.
Saverio Addario, Alberto Priuli, Giovanni Soleti, Sebastian Gratz‐Kelly, Benjamin Zemlin, Stefan Seelecke, Gianluca Rizzello   +6 more
wiley   +1 more source

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source

Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO₂ Thin-Film Transistors and Applications to Circuits

Membranes, 2021
Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance.
Christophe Avis, Jin Jang
doaj   +1 more source